Charge conduction process and photoelectrical properties of bulk heterojunction device based on sulphonated nickel phthalocyanine and rose Bengal

2009 ◽  
Vol 70 (11) ◽  
pp. 1422-1431 ◽  
Author(s):  
G.D. Sharma ◽  
P. Balraju ◽  
S.K. Sharma ◽  
M.S. Roy
2012 ◽  
Vol 13 (7) ◽  
pp. 1185-1191 ◽  
Author(s):  
Christopher Lombardo ◽  
Zi-En Ooi ◽  
Eric Danielson ◽  
Ananth Dodabalapur

2012 ◽  
Vol 51 ◽  
pp. 080207
Author(s):  
Kenichi Yamashita ◽  
Tomoki Watanabe ◽  
Tatsuya Maeda ◽  
Hisao Yanagi

2008 ◽  
Vol 1123 ◽  
Author(s):  
Z.Q. Ma ◽  
B. He ◽  
J. Xu ◽  
L. Zhao ◽  
F. Li ◽  
...  

AbstractIn order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered with silicon dioxide (SiO2) by radio frequency magnetron sputtering. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that the device is a typical tunneling diode for minority carrier and a strong obstructing effect from majority carriers. The potential rectifying behavior and photovoltaic characteristic is present at dark current and weak light illumination, respectively.


2015 ◽  
Vol 8 (4) ◽  
pp. 1245-1255 ◽  
Author(s):  
Kai Wang ◽  
Chang Liu ◽  
Pengcheng Du ◽  
Jie Zheng ◽  
Xiong Gong

A bulk heterojunction device structure was developed to address the unbalanced charge carrier extraction efficiencies in perovskite hybrid solar cells.


2012 ◽  
Vol 51 (8R) ◽  
pp. 080207 ◽  
Author(s):  
Kenichi Yamashita ◽  
Tomoki Watanabe ◽  
Tatsuya Maeda ◽  
Hisao Yanagi

2016 ◽  
Vol 45 (2) ◽  
pp. 484-488 ◽  
Author(s):  
Cheng Wang ◽  
Yu Chen ◽  
Bin Zhang ◽  
Shanshan Liu ◽  
Qibin Chen ◽  
...  

The as-fabricated ITO/CH3NH3PbI3:PVK/Al bulk heterojunction device exhibited a nonvolatile write-once read-many-times memory effect, with a maximum ON/OFF current ratio exceeding 103and a turn-on voltage of −1.57 V.


2004 ◽  
Vol 836 ◽  
Author(s):  
Solon Economopoulos ◽  
Christos L. Chochos ◽  
Giannis K. Govaris ◽  
Panagiotis Yiannoulis ◽  
Joannis K. Kallitsis ◽  
...  

ABSTRACTThe interplay between phase separation in polymer blends consisting of the electron donating poly(3-hexylthiophene-2, 5-diyl) (P3HT) or poly[2-methoxy-5-(2'-ethylhexyloxy)-, 4-phenylenevinylene] (MEH-PPV), with either polyquinoline or a fluorene-oxadiazole copolymer as the electron accepting polymers is presented herein. The bulk heterojunction photovoltaic performance has been examined for these blends along with a new copoly(aryl ether) containing substituted anthracene and fluorene segments coupled with aromatic 1, 3, 4-oxadiazole moieties. Photoluminescence quenching in the MEH-PPV blends as well as a 100-fold photocurrent enhancement of the bulk heterojunction device P3HT/SDPQ photovoltaic device were observed compared to the single layer P3HT device. Finally, the structure and morphology of these films was investigated using atomic force microscopy and scanning electron microscopy in an attempt to correlate the role of morphology to photovoltaic performance.


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