Improved Mobility and Stability of Indium-free Oxide Thin Film Transistor by Metal Capping Layer

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.amdp1-21l ◽

2019 ◽

pp. 563

Author(s):

Ji-Min Park ◽

Ho-Hyun Nahm ◽

Hyun-Suk Kim

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

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High Mobility Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with a Strong Reduction Capping Layer

10.7567/ssdm.2011.a-5-4 ◽

2011 ◽

Author(s):

H. W. Zan ◽

C. C. Yeh ◽

C. C. Tsai ◽

H. F. Meng

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

High Mobility ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Strong Reduction ◽

Capping Layer ◽

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Improved Mobility and Stability of Indium-free Oxide Thin Film Transistor by Metal Capping Layer

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.0563 ◽

2019 ◽

pp. 563

Author(s):

Ji-Min Park ◽

Ho-Hyun Nahm ◽

Hyun-Suk Kim

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

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Contact Properties between Low-Resistive Al-Based Source/Drain and InOx in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.0570 ◽

2019 ◽

pp. 570

Author(s):

Sori Jeon ◽

Kwang-Heum Lee ◽

Seung-Hee Lee ◽

Chi-Sun Hwang ◽

Sang-Hee Ko Park

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

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Contact Properties between Low-Resistive Al-Based Source/Drain and InOx in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.amdp1-23l ◽

2019 ◽

pp. 570

Author(s):

Sori Jeon ◽

Kwang-Heum Lee ◽

Seung-Hee Lee ◽

Chi-Sun Hwang ◽

Sang-Hee Ko Park

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

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Transparent AMOLED Display Derived by Metal Oxide Thin Film Transistor with Praseodymium Doping

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.amdp1-19l ◽

2019 ◽

pp. 557

Author(s):

HUA XU ◽

Miao XU ◽

Min Li ◽

Lei Wang ◽

Junbiao Peng

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Metal Oxide Thin Film ◽

Praseodymium Doping

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Laser annealing of metal oxide thin film transistor

Chinese Journal of Liquid Crystals and Displays ◽

10.37188/yjyxs20203512.1211 ◽

2020 ◽

Vol 35 (12) ◽

pp. 1211-1221

Author(s):

Hong-long NING ◽

◽

Yu-xi DENG ◽

Jian-lang HUANG ◽

Zi-long LUO ◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Laser Annealing ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Metal Oxide Thin Film

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Solution-Processed Oxide Thin-Film Transistor with Spin-Coated Zinc Tin Oxide Active Layer and Indium Zinc Oxide Source/Drain Electrodes

ECS Meeting Abstracts ◽

10.1149/ma2010-02/29/1824 ◽

2010 ◽

Keyword(s):

Thin Film ◽

Active Layer ◽

Tin Oxide ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Solution Processed ◽

Indium Zinc Oxide ◽

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Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion-Conducting Gate Dielectric

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.9b04045 ◽

2019 ◽

Vol 123 (33) ◽

pp. 20278-20286 ◽

Author(s):

Anand Sharma ◽

Nitesh K. Chourasia ◽

Nila Pal ◽

Sajal Biring ◽

Bhola N. Pal

Keyword(s):

Thin Film ◽

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Metal Oxide Thin Film ◽

Ion Conducting ◽

Electron Donation

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ZnO nanowire field emitters integrated with amorphous Indium-Gallium-Zinc-Oxide thin film transistor

2017 30th International Vacuum Nanoelectronics Conference (IVNC) ◽

10.1109/ivnc.2017.8051612 ◽

2017 ◽

Author(s):

Xiaojie Li ◽

Zhipeng Zhang ◽

Hai Ou ◽

Juncong She ◽

Shaozhi Deng ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zno Nanowire ◽

Zinc Oxide Thin Film ◽

Field Emitters ◽

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A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer

Applied Physics Letters ◽

10.1063/1.4979868 ◽

2017 ◽

Vol 110 (15) ◽

pp. 153503 ◽

Author(s):

Yong Zeng ◽

Honglong Ning ◽

Zeke Zheng ◽

Hongke Zhang ◽

Zhiqiang Fang ◽

...

Keyword(s):

Thin Film ◽

Sandwich Structure ◽

Room Temperature ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Channel Layer ◽

Bias Stability ◽

Structure Channel

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