Mobility improvement of LTPS thin film transistor using stacked capping layer

2021 ◽  
pp. 111591
Author(s):  
Taeyong Kim ◽  
Donggi Shin ◽  
Jinsu Park ◽  
Duy Phong Pham ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Capping Layer

Role of metal capping layer on highly enhanced electrical performance of In-free Si–Zn–Sn–O thin film transistor

2015 ◽  
Vol 594 ◽  
pp. 293-298 ◽  
Author(s):  
Jun Young Choi ◽  
SangSig Kim ◽  
Dae Hwan Kim ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Capping Layer

scholarly journals Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
P. T. Tue ◽  
T. Miyasako ◽  
E. Tokumitsu ◽  
T. Shimoda
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Thin Film Transistor ◽  
Charge Injection ◽  
Memory Window ◽  
Gate Insulator ◽  
Insulator Layer ◽  
Capping Layer ◽  
Insulator Layers ◽  
Injection Effect

We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT) which uses solution-processed indium-tin-oxide (ITO) and lead-zirconium-titanate (PZT) film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1) a reduction of the charge injection and (2) an increase of effective coercive voltage dropped on the insulator.

Improved thin film transistor performance of solution-processed-zinc-oxide nanorods with spin-on-glass capping layer

2012 ◽  
Vol 12 ◽  
pp. e18-e23 ◽  
Author(s):  
Musarrat Hasan ◽  
Ji-Young Oh ◽  
Jonghyurk Park ◽  
Sang Chul Lim ◽  
Hee-Ok Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Zinc Oxide Nanorods ◽  
Solution Processed ◽  
Capping Layer ◽  
Oxide Nanorods

Improved Mobility and Stability of Indium-free Oxide Thin Film Transistor by Metal Capping Layer

2019 ◽  
pp. 563
Author(s):  
Ji-Min Park ◽  
Ho-Hyun Nahm ◽  
Hyun-Suk Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Capping Layer

High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer

2014 ◽  
Author(s):  
H. H. Hsu ◽  
P. Chiou ◽  
Y. C. Chiu ◽  
S. S. Yen ◽  
C. Y. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Oxide Semiconductor ◽  
Capping Layer ◽  
Narrow Bandgap

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior

Contact Properties between Low-Resistive Al-Based Source/Drain and InOx in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT

2019 ◽  
pp. 570
Author(s):  
Sori Jeon ◽  
Kwang-Heum Lee ◽  
Seung-Hee Lee ◽  
Chi-Sun Hwang ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Bottom Contact

Contact Properties between Low-Resistive Al-Based Source/Drain and InOx in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT

2019 ◽  
pp. 570
Author(s):  
Sori Jeon ◽  
Kwang-Heum Lee ◽  
Seung-Hee Lee ◽  
Chi-Sun Hwang ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Bottom Contact
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