Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques

2015 ◽  
Vol 70 ◽  
pp. 373-378 ◽  
Author(s):  
N. Muhunthan ◽  
Om Pal Singh ◽  
Vijaykumar Toutam ◽  
V.N. Singh
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Boundaries ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Czts Thin Films ◽  
Microscopy Techniques

Conductive Atomic Force Microscopy and Scanning Impedance Microscopy for the Imaging of Electrical Domain in CaCu3Ti4O12 Perovskite Oxide

2009 ◽  
Vol 1232 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
Vito Raineri
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Boundaries ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Perovskite Oxide ◽  
Electrical Characteristics ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

AbstractElectrical characterization of CaCu3Ti4O12 (CCTO) ceramics with scanning probe based techniques has been carried out. In particular, conductive atomic force microscopy (C-AFM) and scanning impedance microscopy (SIM) have been used to demonstrate the presence, shape and size in CCTO ceramics of the different electrically domains, both at the grain boundaries and within the grains. The electrical characteristics of single grains and of single domains have been evaluated and it has been observed that the conductive grains are surrounded by insulating grain boundaries.

Electrical Characterization of Bismuth Sulfide Nanowire Arrays by Conductive Atomic Force Microscopy

2008 ◽  
Vol 112 (49) ◽  
pp. 19680-19685 ◽  
Author(s):  
Pavels Birjukovs ◽  
Nikolay Petkov ◽  
Ju Xu ◽  
Janis Svirksts ◽  
John J. Boland ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Characterization ◽  
Nanowire Arrays ◽  
Bismuth Sulfide ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Nanoscale electrical characterization of organic photovoltaic blends by conductive atomic force microscopy

2006 ◽  
Vol 89 (3) ◽  
pp. 032107 ◽  
Author(s):  
Olivier Douhéret ◽  
Laurence Lutsen ◽  
Ann Swinnen ◽  
Martin Breselge ◽  
Koen Vandewal ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Characterization ◽  
Organic Photovoltaic ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Electrical characterization of epitaxial FeSi2 nanowire on Si (110) by conductive-atomic force microscopy

2010 ◽  
Vol 25 (2) ◽  
pp. 213-218 ◽  
Author(s):  
Shengde Liang ◽  
Brian A. Ashcroft
Keyword(s):  
Atomic Force Microscopy ◽  
Schottky Barrier ◽  
Iron Silicide ◽  
Equivalent Circuit Model ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Measurement Results

We used conductive-atomic force microscopy (c-AFM) for electrical characterization of self-assembled epitaxial iron silicide nanowires (NWs) on Si (110). The NWs, 6 nm high by 10 nm wide and several micrometers long, were partially covered by a macro-gold-pad as one electrode. Another electrode is the conductive AFM tip. The resistance of a single FeSi2 NW was measured to be 29.7 kΩ, corresponding to a resistivity of 150 ± 30 μΩ·cm. A Schottky barrier formed between NWs and silicon substrate was clearly demonstrated, which offers electrical isolation for NWs. An equivalent circuit model based on the Schottky barrier was proposed and was correlated with measurement results. This simple electrical characterization approach may find wide applications for various one-dimensional nanostructures.

Sign in / Sign up

Export Citation Format

Share Document