Electrical characterization of HgTe nanowires using conductive atomic force microscopy

2010 ◽  
Vol 108 (11) ◽  
pp. 114308 ◽  
Author(s):  
P. Gundersen ◽  
K. O. Kongshaug ◽  
E. Selvig ◽  
R. Haakenaasen
2008 ◽  
Vol 112 (49) ◽  
pp. 19680-19685 ◽  
Author(s):  
Pavels Birjukovs ◽  
Nikolay Petkov ◽  
Ju Xu ◽  
Janis Svirksts ◽  
John J. Boland ◽  
...  

2006 ◽  
Vol 89 (3) ◽  
pp. 032107 ◽  
Author(s):  
Olivier Douhéret ◽  
Laurence Lutsen ◽  
Ann Swinnen ◽  
Martin Breselge ◽  
Koen Vandewal ◽  
...  

2009 ◽  
Vol 1232 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
Vito Raineri

AbstractElectrical characterization of CaCu3Ti4O12 (CCTO) ceramics with scanning probe based techniques has been carried out. In particular, conductive atomic force microscopy (C-AFM) and scanning impedance microscopy (SIM) have been used to demonstrate the presence, shape and size in CCTO ceramics of the different electrically domains, both at the grain boundaries and within the grains. The electrical characteristics of single grains and of single domains have been evaluated and it has been observed that the conductive grains are surrounded by insulating grain boundaries.


2010 ◽  
Vol 25 (2) ◽  
pp. 213-218 ◽  
Author(s):  
Shengde Liang ◽  
Brian A. Ashcroft

We used conductive-atomic force microscopy (c-AFM) for electrical characterization of self-assembled epitaxial iron silicide nanowires (NWs) on Si (110). The NWs, 6 nm high by 10 nm wide and several micrometers long, were partially covered by a macro-gold-pad as one electrode. Another electrode is the conductive AFM tip. The resistance of a single FeSi2 NW was measured to be 29.7 kΩ, corresponding to a resistivity of 150 ± 30 μΩ·cm. A Schottky barrier formed between NWs and silicon substrate was clearly demonstrated, which offers electrical isolation for NWs. An equivalent circuit model based on the Schottky barrier was proposed and was correlated with measurement results. This simple electrical characterization approach may find wide applications for various one-dimensional nanostructures.


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