Thermoelectric properties of (HgTe)0.55(PbTe)0.45 eutectic composite with In doping

2020 ◽  
Vol 129 ◽  
pp. 110916 ◽  
Author(s):  
Chih-Chien Chang ◽  
Chang-Han Liu ◽  
Ching-Chemg Wu ◽  
Pallab Bag ◽  
Yung-Kang Kuo
2019 ◽  
Vol 49 (1) ◽  
pp. 611-620 ◽  
Author(s):  
Bo Feng ◽  
Guangqiang Li ◽  
Xiaoming Hu ◽  
Peihai Liu ◽  
Rusong Li ◽  
...  

2016 ◽  
Vol 98 ◽  
pp. 150-154 ◽  
Author(s):  
Dan Zhang ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Liangwei Fu ◽  
Ye Xiao ◽  
...  

2014 ◽  
Vol 2 (29) ◽  
pp. 11171-11176 ◽  
Author(s):  
Cheng-Lung Chen ◽  
Heng Wang ◽  
Yang-Yuan Chen ◽  
Tristan Day ◽  
G. Jeffrey Snyder

Doped polycrystalline SnSe could have zT 0.6 at 750 K, suggesting good potential for thermoelectrics. Challenges come from difficulty in doping and hysteresis in resistivity.


2016 ◽  
Vol 672 ◽  
pp. 558-563 ◽  
Author(s):  
Qing Tan ◽  
Wei Sun ◽  
Zhiliang Li ◽  
Jing-Feng Li

ChemInform ◽  
2016 ◽  
Vol 47 (25) ◽  
Author(s):  
Qing Tan ◽  
Wei Sun ◽  
Zhiliang Li ◽  
Jing-Feng Li

2014 ◽  
Vol 2 (8) ◽  
pp. 2839 ◽  
Author(s):  
Rajeshkumar Mohanraman ◽  
Raman Sankar ◽  
Karunakara Moorthy Boopathi ◽  
Fang-Cheng Chou ◽  
Chih-Wei Chu ◽  
...  

2004 ◽  
Vol 842 ◽  
Author(s):  
Norihiko L. Okamoto ◽  
Haruyuki Inui

ABSTRACTThe crystal structures and thermoelectric properties of Ba-Ge type-I clathrate compounds (Ba8GaXGe46-X and Ba8Ga16-YInYGe30) have been investigated as a function of Ga and In contents. Ba8GaXGe46-X alloys have a crystal structure that contains an ordered arrangement of Ge vacancies, forming a superstructure based on the normal type-I structure until X reaches 3, whereas they have the normal type-I structure when X exceeds 3. The dimensionless thermoelectric figure of merit (ZT) increases with the increase in the Ga content, exhibiting the highest value of 0.49 for Ba8Ga16Ge30. The power factor for Ba8Ga10In6Ge30 is 1.5 times that for Ba8Ga16Ge30 so that the In containing alloy exhibits a ZT value as high as 1.03 at 700°C.


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