Enhancement of the Thermoelectric Properties of BiCuSeO via In Doping and Powder Size Controlling

2019 ◽  
Vol 49 (1) ◽  
pp. 611-620 ◽  
Author(s):  
Bo Feng ◽  
Guangqiang Li ◽  
Xiaoming Hu ◽  
Peihai Liu ◽  
Rusong Li ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Powder Size ◽  
In Doping ◽  
Size Controlling

Improvement of thermoelectric properties of Cu 3 SbSe 4 compound by In doping

2016 ◽  
Vol 98 ◽  
pp. 150-154 ◽  
Author(s):  
Dan Zhang ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Liangwei Fu ◽  
Ye Xiao ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
In Doping

scholarly journals Thermoelectric properties of p-type polycrystalline SnSe doped with Ag

2014 ◽  
Vol 2 (29) ◽  
pp. 11171-11176 ◽  
Author(s):  
Cheng-Lung Chen ◽  
Heng Wang ◽  
Yang-Yuan Chen ◽  
Tristan Day ◽  
G. Jeffrey Snyder
Keyword(s):  
Thermoelectric Properties ◽  
In Doping ◽  
Good Potential ◽  
P Type

Doped polycrystalline SnSe could have zT 0.6 at 750 K, suggesting good potential for thermoelectrics. Challenges come from difficulty in doping and hysteresis in resistivity.

Enhanced thermoelectric properties of earth-abundant Cu2SnS3 via In doping effect

2016 ◽  
Vol 672 ◽  
pp. 558-563 ◽  
Author(s):  
Qing Tan ◽  
Wei Sun ◽  
Zhiliang Li ◽  
Jing-Feng Li
Keyword(s):  
Thermoelectric Properties ◽  
Doping Effect ◽  
In Doping ◽  
Earth Abundant

ChemInform Abstract: Enhanced Thermoelectric Properties of Earth-Abundant Cu2SnS3via in Doping Effect.

ChemInform ◽  
2016 ◽  
Vol 47 (25) ◽  
Author(s):  
Qing Tan ◽  
Wei Sun ◽  
Zhiliang Li ◽  
Jing-Feng Li
Keyword(s):  
Thermoelectric Properties ◽  
Doping Effect ◽  
In Doping ◽  
Earth Abundant

Influence of In doping on the thermoelectric properties of an AgSbTe2 compound with enhanced figure of merit

2014 ◽  
Vol 2 (8) ◽  
pp. 2839 ◽  
Author(s):  
Rajeshkumar Mohanraman ◽  
Raman Sankar ◽  
Karunakara Moorthy Boopathi ◽  
Fang-Cheng Chou ◽  
Chih-Wei Chu ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
In Doping

Fabrication and Thermoelectric Properties of N-Type Bi2Te3 Based Compounds by Spark Plasma Sintering

2005 ◽  
Vol 486-487 ◽  
pp. 253-256 ◽  
Author(s):  
D.M. Lee ◽  
Cheol Ho Lim ◽  
Dong Choul Cho ◽  
Seung Y. Shin ◽  
Won Seung Cho
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Spark Plasma Sintering ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Powder Size ◽  
Plasma Sintering ◽  
Spark Plasma

N-type Bi2Te3 based thermoelectric compound was prepared by spark plasma sintering with a temperature range of 340~460°C and powder size of ~75㎛, 76~150㎛, 151~250㎛. Thermoelectric properties of the compound were measured as a function of the sintering temperature and powder size. With increasing sintering temperature, the electrical resistivity and thermal conductivity of the compound greatly changed because of the increase in relative density. The Seebeck coefficient and electrical resistivity were varied largely with increasing powder size. Therefore, the compound sintered at 460°C, with the powder of ~75㎛, showed a figure of merit of 2.44 x 10-3/K. Also, the bending strength was 75MPa.

Effects of Ga- and In-doping on the Thermoelectric Properties in Ba-Ge Clathrate Compounds

2004 ◽  
Vol 842 ◽  
Author(s):  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Crystal Structure ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Type I ◽  
Thermoelectric Figure Of Merit ◽  
Normal Type ◽  
Thermoelectric Figure ◽  
Clathrate Compounds ◽  
In Doping ◽  
Ga Content

ABSTRACTThe crystal structures and thermoelectric properties of Ba-Ge type-I clathrate compounds (Ba8GaXGe46-X and Ba8Ga16-YInYGe30) have been investigated as a function of Ga and In contents. Ba8GaXGe46-X alloys have a crystal structure that contains an ordered arrangement of Ge vacancies, forming a superstructure based on the normal type-I structure until X reaches 3, whereas they have the normal type-I structure when X exceeds 3. The dimensionless thermoelectric figure of merit (ZT) increases with the increase in the Ga content, exhibiting the highest value of 0.49 for Ba8Ga16Ge30. The power factor for Ba8Ga10In6Ge30 is 1.5 times that for Ba8Ga16Ge30 so that the In containing alloy exhibits a ZT value as high as 1.03 at 700°C.

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