Effect of scandium doping and of matrix composition variation on galvanomagnetic properties and electronic structure of Pb1-x-ySnxScyTe alloys

2020 ◽  
Vol 132 ◽  
pp. 111002
Author(s):  
E.P. Skipetrov ◽  
A.V. Khvorostin ◽  
A.V. Knotko ◽  
V.E. Slynko
Keyword(s):  
Electronic Structure ◽  
Matrix Composition ◽  
Galvanomagnetic Properties ◽  
Composition Variation

Galvanomagnetic properties and electronic structure of Pb1−x−ySnxVyTe under pressure

2011 ◽  
Vol 27 (1) ◽  
pp. 015019 ◽  
Author(s):  
E P Skipetrov ◽  
A N Golovanov ◽  
B B Kovalev ◽  
A V Knotko ◽  
E I Slyn’ko ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Galvanomagnetic Properties

scholarly journals Кинетика изменения концентраций магнитных ионов примеси в сплавах Pb-=SUB=-1-x-y-=/SUB=-Sn-=SUB=-x-=/SUB=-V-=SUB=-y-=/SUB=-Te при легировании

2018 ◽  
Vol 52 (7) ◽  
pp. 686
Author(s):  
Е.П. Скипетров ◽  
Н.С. Константинов ◽  
Л.А. Скипетрова ◽  
А.В. Кнотько ◽  
В.Е. Слынько
Keyword(s):  
Electronic Structure ◽  
Crystal Lattice ◽  
X Ray ◽  
Structure Rearrangement ◽  
Galvanomagnetic Properties ◽  
Temperature Dependences ◽  
Stockbarger Method ◽  
Diamagnetic Contribution ◽  
Magnetic States ◽  
Vanadium Ions

AbstractThe field and temperature dependences of the magnetization (magnetic fields B ≤ 7.5 T, temperatures T = 2.0–75 K) of samples from a Pb_1– x – y Sn_ x V_ y Te ( x = 0.08, y = 0.01) single-crystal ingot synthesized by the Bridgman–Stockbarger method. It is established that the sample magnetization contains two main contributions, notably, the paramagnetism of vanadium ions and diamagnetism of the crystal lattice. The field and temperature dependences of the magnetization are approximated by the sum of modified Brillouin functions corresponding to the paramagnetic contributions of vanadium in two different charge states and the diamagnetic contribution linear in terms of field. The concentrations of vanadium ions in two different magnetic states and the character of their variation along the ingot are determined within the scope of the alloy’s electronic-structure rearrangement because of doping. The results are compared with the data of X-ray fluorescence microanalysis and the results of studying the galvanomagnetic properties of the samples.

Galvanomagnetic properties and electronic structure of iron-doped PbTe

2015 ◽  
Vol 118 (19) ◽  
pp. 195701 ◽  
Author(s):  
E. P. Skipetrov ◽  
O. V. Kruleveckaya ◽  
L. A. Skipetrova ◽  
A. V. Knotko ◽  
E. I. Slynko ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Galvanomagnetic Properties ◽  
Iron Doped

Galvanomagnetic and Magnetic Properties of Pb1-yScyTe

2015 ◽  
Vol 233-234 ◽  
pp. 97-100 ◽  
Author(s):  
E.P. Skipetrov ◽  
M.M. Markina ◽  
K.V. Zakharov ◽  
L.A. Skipetrova ◽  
A.A. Solovev ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Properties ◽  
Electronic Structure ◽  
Impurity Content ◽  
Free Electron Concentration ◽  
Resonant Level ◽  
Structure Rearrangement ◽  
Galvanomagnetic Properties ◽  
Weak Magnetic Fields ◽  
Heavily Doped

The galvanomagnetic properties in weak magnetic fields (4.2≤T≤300 K, B≤0.07 T) as well as magnetic properties (2≤T≤300 K, B≤9 T) of the single-crystal Pb1-yScyTe (y≤0.02) alloys have been investigated. We find that an increase of Sc impurity content leads to a monotonous growth of the free electron concentration (from 1016 cm-3 to 1020 cm-3). In heavily doped alloys (y>0.01), it tends to saturation, indicating the pinning of the Fermi energy by the scandium resonant level located inside the conduction band. The energy of the level is estimated (ESc≈Ec+280 meV) and the model of electronic structure rearrangement of Pb1-yScyTe alloys with doping is proposed. In the frame of this model, using experimental temperature and magnetic field dependences of magnetization, the concentrations of magnetically active scandium ions are determined and connection of the electronic structure with the magnetic properties of the alloys are discussed.

scholarly journals Влияние примеси никеля на гальваномагнитные свойства и электронную структуру PbTe

2020 ◽  
Vol 54 (10) ◽  
pp. 987
Author(s):  
Е.П. Скипетров ◽  
Б.Б. Ковалев ◽  
И.В. Шевченко ◽  
А.В. Кнотько ◽  
В.Е. Слынько
Keyword(s):  
Electronic Structure ◽  
Hall Coefficient ◽  
Impurity Concentration ◽  
Inversion Layer ◽  
Impurity Band ◽  
Anomalous Temperature ◽  
Conduction Mechanisms ◽  
Galvanomagnetic Properties ◽  
Temperature Dependences ◽  
Increasing Temperature

The phase and elemental composition and galvanomagnetic properties (4.2 < T < 300 K, B < 7 T) of Pb1-yNiyTe alloys are studied at a variation of the nickel impurity concentration along the single-crystal ingot synthesized by the Bridgman-Stockbarger technique. It is shown that the solubility of nickel does not exceed 0.35 mol %. Anomalous temperature dependences of the Hall coefficient and temperature and field dependences of magnetoresistance are found. To explain the results, it is assumed that an n-type inversion layer appears on the surface of the samples and that there are several competing conduction mechanisms in the samples. A model of the Pb1-yNiyTe electronic structure is proposed that assumes pinning of the Fermi level within the Ni impurity band, located at the edge of the valence band and moving deeper into it with increasing temperature.

Effect of a Nickel Impurity on the Galvanomagnetic Properties and Electronic Structure of PbTe

2020 ◽  
Vol 54 (10) ◽  
pp. 1171-1179
Author(s):  
E. P. Skipetrov ◽  
B. B. Kovalev ◽  
I. V. Shevchenko ◽  
A. V. Knotko ◽  
V. E. Slynko
Keyword(s):  
Electronic Structure ◽  
Galvanomagnetic Properties

Effect of Pressure on Electronic Structure of Pb1−xSnxTe Alloys Doped with Gallium

2006 ◽  
Vol 929 ◽  
Author(s):  
Evgeny Pavlovich Skipetrov ◽  
Alexander Golubev ◽  
Nikolay Dmitriev ◽  
Vasily Slyn'ko
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Alloy Composition ◽  
Matrix Composition ◽  
Free Electron Concentration ◽  
Resonant Level ◽  
Pressure Coefficients ◽  
Temperature Matrix ◽  
Band Dispersion ◽  
Galvanomagnetic Effects

ABSTRACTThe galvanomagnetic effects in the n-Pb1−xSnxTe:Ga (x=0.09-0.21) alloys at the temperatures 4.2≤T≤300 K and under hydrostatic compression up to 16 kbar have been investigated. It is shown that in all samples and in the whole investigated pressure range temperature dependencies of resistivity and Hall coefficient have a “metallic” character, indicating stabilization of Fermi level by the impurity resonant level. Using the experimental data in the frame of two-band dispersion law the dependencies of the free electron concentration and the Fermi level position upon temperature, matrix composition and pressure were calculated. The temperature, composition and pressure coefficients of gallium resonant level movement were obtained and the electronic structure under varying the alloy composition and under pressure were built.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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