Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens

A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account, otherwise the measured electron concentration proves to be overestimated. A correlation between the electron concentration Nopt and the characteristic wavenumber ν+ has been calculated and proves to be well fit by a third order polynomial. The test specimens have been obtained by tin or sulfur doping of indium arsenide. The electron concentration in the specimens has been measured at room temperature using two methods: the optical method developed by the Authors (Nopt) and the conventional four-probe Hall method (the Van der Pau method, NHall). The reflecting surfaces of the specimens have been chemically polished or fine abrasive ground. The condition Nopt > NHall has been shown to hold for all the test specimens. The difference between the optical and the Hall electron concentrations is greater for specimens having polished reflecting surfaces. The experimental data have been compared with earlier data for n-GaAs. A qualitative model explaining the experimental data has been suggested.

Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs

A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into account the pasmon–phonon coupling, otherwise free electron concentration will be overestimated. We have calculated electron concentration Nopt as a function of characteristic wave number ν+ which is described by a second order polynomial. Twenty-five tellurium doped gallium arsenide specimens have been tested for electron concentration using two methods, i.e., the conventional four-probe method (Van der Pau) and the optical method developed by us (the measurements have been carried out at room temperature). We have used the experimental results to plot the dependence of electron concentration based on the Hall data (NHall) on electron concentration based on the optical data (Nopt). This dependence is described by a linear function. We show that the data of optical and electrophysical measurements agree if the electron concentration is Neq = 1.07 · 1018 cm-3. At lower Hall electron concentrations, NHall < Nopt, whereas at higher ones, NHall > Nopt. We have suggested a qualitative model describing these results. We assume that tellurium atoms associate into complexes with arsenic vacancies thus reducing the concentration of electrons. The concentration of arsenic vacancies is lower on the crystal surface, hence the Nopt > NHall condition should be met. With an increase in doping level, more and more tellurium atoms remain electrically active, so the bulk concentration of electrons starts to prevail over the surface one. However with further increase in doping level the NHall/Nopt ratio starts to decrease again and tends to unity. This seems to originate from the fact that the decomposition intensity of the tellurium atom + arsenic vacancy complexes decreases with an increase in doping level.

Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors

Low temperature (at 100 °C and below) growth of ZnO thin films by atomic layer deposition (ALD) is demonstrated. Properties of the layers grown with two different oxygen reagents: ozone and water are compared. Diethylzinc (DEZ) was used as metal precursor. Electrical and structural properties of films obtained at several different growth temperatures, ranging from 50 °C to 250 °C were analyzed. It turned out that the film grown in the water-based process at 250 °C and all films grown with ozone have more ordered crystallographic structure with the privileged growth direction (001) perpendicular to the substrate than water-based samples grown in temperatures 100–200 °C. Higher free electron concentration at room temperature was observed for ozone-based samples grown at 100 °C and 150 °C in comparison to water-based samples obtained at the same growth temperature. Low value of resistivity in case of ozone-based samples grown at 100 °C is a promising result, however lower electron mobility requires further optimization.

Influence of Divacancy-Oxygen Defects on Recombination Properties of n-Si Subjected to Irradiation and Subsequent Annealing

The variation of recombination properties in n-Si grown by the Czochralski method, doped to the free electron concentration n0 ∼ 10^14 ÷10^16 cm^−3, irradiated with 60Co y-quanta or 1-MeV electrons, and isochronously annealed for 20 min in the temperature interval 180–380∘C, in which divacancy-oxygen (V2O) complexes are formed and annealed, has been studied in detail. The nonequilibrium charge carrier lifetime т is found to significantly decrease after the annealing in a temperature interval from 180 to 280∘C, with the effect being stronger for low-resistive n-Si. It is shown that a change in т after the annealing at 180–380∘C is caused by divacancy defects, most probably V2O. By analyzing the experimental data with the help of the Shockley–Read–Hall statistics, it is found that the formation of V2O defects is characterized by an activation energy of 1.25±0.05 eV and a frequency factor of (1±0.5)×10^9 s^−1, and their annealing by an activation energy of 1.54±0.09 eV and a frequency factor of (2.1±1.4)×10^10 s^−1. The values of the hole capture cross-sections by singly and doubly charged acceptor states of V2O are obtained as: (5±2)×10^−13 and (8±4)×10^−12 cm^2, respectively.

Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated. It was found that defect-rich regions possess an embedded positive charge in both n-and p-type of the samples whose origin was ascribed to oxygen precipitates (OP). The presence of that charge in the implanted region of p-based LED gave rise to the apparent conductivity type conversion and to a significant increase of free electron concentration in n-based LEDs. A significant difference in the shape and in the excitation dependence of luminescence spectra as well as in the properties of DLTS signals was found between p-and n-type samples. From an analysis of the obtained data the DRL band centered at 0.79 eV was ascribed to small OPs segregated at dislocations whose filling with the holes hinders optical transitions via dislocation-related states at 0.805 eV and the broad DRL band at energies higher than 0.81 eV was ascribed to large OPs.

Electromagnetic Property of La0.7Sr0.3MnO3/Ag Composite at High Frequency

The phase structure, and electrical and magnetic properties of La0.7Sr0.3MnO3(LSMO)-xAg (xis the mole ratio,x=0, 0.3, 0.5) composite were investigated. It is found that the sample withx=0 is single phase; the samples withx=0.3 and 0.5 present three phase composite structure of the manganese oxide and Ag. With the increasing of Ag content, the grain size of the samples increases and the grain boundaries transition from fully faceted to partially faceted. The permittivity of spectrum (10 MHz - 1 GHz) and the theoretical simulation reveal that the plasma frequencyfpincrease with Ag content, due to the increasing of free electron concentration, which is further supported by the enhancement of conductivity. While for the permeability (μr'), theμr'decrease with the increasing of Ag content at low frequency range (f< 20 MHz), while at the relative high frequency range (f> 300 MHz), theμr'increased with Ag content. Therefore, the introduction of elemental Ag resulted in a higherμr'at the relative high frequency range.