Hydrogenic Donor Binding Energy in a Strained BxGa1-xN/BN Quantum well

2015 ◽  
Vol 2 (9) ◽  
pp. 4474-4476
Author(s):  
N.Narayana Moorthy ◽  
A.John Peter
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Donor Binding Energy ◽  
Hydrogenic Donor

scholarly journals Polaronic Effects of a Hydrogenic Donor Impurity in Low Dimensional Semiconductor Systems

2009 ◽  
Vol 1 (3) ◽  
pp. 422-429 ◽  
Author(s):  
A. J. Peter ◽  
N. Radhakrishnan
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Quantum Well ◽  
Longitudinal Optical ◽  
Wire Radius ◽  
Donor Impurity ◽  
Donor Binding Energy ◽  
Quantum Well Wire ◽  
Hydrogenic Donor ◽  
Low Dimensional

The ground state of a polaron bound to hydrogen like donor impurity is investigated by considering the effect of bulk Longitudinal-Optical (LO) phonon. Donor binding energy of a hydrogenic donor, with the inclusion of electron-phonon interaction is computed for the low-dimensional semiconducting systems like quantum well, quantum well wire and quantum dot taking GaAs/AlxGa1-xAs systems as an example. Calculations are performed using a variational approach within the single band effective mass approximation. The results show that the polaronic effect is more pronounced for the lowest confinement. The polaronic effect enhances the donor binding energy but it diminishes when the well width, wire radius and dot radius become larger. Also the numerical calculations reveal that the influences of phonons on donor are considerable and should not be neglected especially for narrow dimensions in all the three confinements.Keywords: Donor binding energy; Polaronic effect; Quantum dot; Quantum wire; Quantum well.© 2009 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.DOI: 10.3329/jsr.v1i3.2529            J. Sci. Res. 1 (3), 422- 429 (2009)

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

scholarly journals Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well

2009 ◽  
Vol 4 (11) ◽  
pp. 1315-1318 ◽  
Author(s):  
Jun Wang ◽  
Shu-Shen Li ◽  
Yan-Wu Lü ◽  
Xiang-Lin Liu ◽  
Shao-Yan Yang ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Spin Orbit ◽  
Donor Impurity ◽  
Orbit Splitting ◽  
Hydrogenic Donor Impurity ◽  
Spin Orbit Splitting ◽  
Hydrogenic Donor

EFFECT OF Γ-X CROSSOVER ON THE DONOR BINDING ENERGY IN A QUANTUM WELL

2005 ◽  
Vol 19 (25) ◽  
pp. 3861-3868 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Excited States ◽  
Conduction Band ◽  
Ground State ◽  
External Hydrostatic Pressure ◽  
Donor Binding Energy ◽  
Dielectric Screening

The effect of Γ-X crossover due to the external hydrostatic pressure on the ground state donor binding energy as well as for some low lying excited states for a Quantum well has been investigated by considering the non-parabolicity of the conduction band and pressure dependent spatial dielectric screening. It is observed that the effect of Γ-X crossover is predominant for ground state than for low lying excited states.

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