Donor Binding Energy in GaAs/Ga 1− x Al x As Quantum Well: the Laser Field and Temperature Effects

2013 ◽  
Vol 60 (1) ◽  
pp. 124-128 ◽  
Author(s):  
Shu-Yi Wei ◽  
Wen-Xiu Hou ◽  
Xiao-Yang Chen ◽  
Cong-Xin Xia
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Temperature Effects ◽  
Laser Field ◽  
Donor Binding Energy

Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well

2012 ◽  
Vol 407 (3) ◽  
pp. 528-532 ◽  
Author(s):  
U. Yesilgul ◽  
F. Ungan ◽  
E. Kasapoglu ◽  
H. Sarı ◽  
I. Sökmen
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
High Frequency ◽  
Laser Field ◽  
Frequency Laser

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

EFFECT OF Γ-X CROSSOVER ON THE DONOR BINDING ENERGY IN A QUANTUM WELL

2005 ◽  
Vol 19 (25) ◽  
pp. 3861-3868 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Excited States ◽  
Conduction Band ◽  
Ground State ◽  
External Hydrostatic Pressure ◽  
Donor Binding Energy ◽  
Dielectric Screening

The effect of Γ-X crossover due to the external hydrostatic pressure on the ground state donor binding energy as well as for some low lying excited states for a Quantum well has been investigated by considering the non-parabolicity of the conduction band and pressure dependent spatial dielectric screening. It is observed that the effect of Γ-X crossover is predominant for ground state than for low lying excited states.

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