Influence of thickness on physical and optoelectronic properties of DC sputtered bilayer molybdenum thin films for CIGS solar cell

Author(s):  
Priya S. Suryavanshi ◽  
C.J. Panchal ◽  
Arvind L. Patel
Author(s):  
Yuming Xue ◽  
Xinyu Wang ◽  
Liming Zhang ◽  
Shipeng Zhang ◽  
Lang Wang ◽  
...  

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.


IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 193560-193568
Author(s):  
Mohammad Aminul Islam ◽  
Md. Khan Sobayel Bin Rafiq ◽  
Halina Misran ◽  
Md. Akhtar Uzzaman ◽  
Kuaanan Techato ◽  
...  

2007 ◽  
Vol 1012 ◽  
Author(s):  
Yusuke Oda ◽  
Takashi Minemoto ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa

AbstractWe report the preparation of Cu(In,Ga)Se2 (CIGS) thin-films using the electrodeposited (ED) CuGaSe2 (CGS)/CuInSe2 (CIS) bilayers. CGS/CIS bilayers were prepared on soda-lime glass /Mo substrates to realize the controlled Ga/(Ga+In) ratios and smooth layers of CIGS thin-films. It was found that the composition and morphology of CGS films was highly dependent on the composition of the bath. Crack-free and morphological CGS thin-films were obtained by the addition of supporting electrolyte and brightener. For the morphology and the crystallization of the ED-CIGS films, the best electric charges of CGS and CIS films were 1.0 C and 6.0 C respectively and the films were annealed at 600 oC for 60 min. However, the interface of the ED-CGS/CIS film had some voids and interdiffusions of Ga and In did not take place by annealing. The CIGS solar cell using ED-CGS/CIS films as an absorber exhibited diode behavior.


2011 ◽  
Vol 159 (2) ◽  
pp. D129-D134 ◽  
Author(s):  
S. Ahmed ◽  
K. B. Reuter ◽  
Q. Huang ◽  
H. Deligianni ◽  
L. T. Romankiw ◽  
...  

2018 ◽  
Vol 44 (2) ◽  
pp. 2529-2538 ◽  
Author(s):  
P. Sakthivel ◽  
R. Murugan ◽  
S. Asaithambi ◽  
M. Karuppaiah ◽  
G. Vijayaprasath ◽  
...  

2011 ◽  
Vol 48 (4) ◽  
pp. 328-333
Author(s):  
Do-Wan Kim ◽  
Dong-Won Lee ◽  
Hee-Soo Lee ◽  
Seung-Tae Kim ◽  
Chi-Hong Park ◽  
...  

2020 ◽  
Vol 17 ◽  
pp. 103122 ◽  
Author(s):  
A.K. Mahmud Hasan ◽  
K. Sobayel ◽  
Itaru Raifuku ◽  
Yasuaki Ishikawa ◽  
Md. Shahiduzzaman ◽  
...  

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