Robust geometric parameter optimization of a crossed beveloid gear pair with approximate line contact

2022 ◽  
Vol 168 ◽  
pp. 104596
Author(s):  
Bing Cao ◽  
Guolong Li ◽  
Yijie Tao ◽  
Quanfu Ran
2018 ◽  
Vol 119 ◽  
pp. 753-765 ◽  
Author(s):  
Tiancheng Ouyang ◽  
Haozhong Huang ◽  
Xiaorong Zhou ◽  
Mingzhang Pan ◽  
Nan Chen ◽  
...  

2014 ◽  
Vol 211 (11) ◽  
pp. 2527-2531 ◽  
Author(s):  
Zhiqiang Duan ◽  
Meicheng Li ◽  
Trevor Mwenya ◽  
Fan Bai ◽  
Yingfeng Li ◽  
...  

2011 ◽  
Vol 321 ◽  
pp. 157-160 ◽  
Author(s):  
Ning Li ◽  
Wei Li ◽  
Ning Liu ◽  
Hua Gang Liu

Helical gear with asymmetric involutes is a new kind gear which driving side surface is large pressure angle profile. The numbers of meshing tooth are discussed during helical gear pair meshing process, thus the length of total contact lines is determined easily. It is difficult to calculate contact stress by existing formula because this kind gear is non-standard. A calculating formula is derived which can calculate contact stress of helical gear with asymmetric involutes in this paper. A computer’s software is written in order to calculate instantaneous contact stress of contact line. Contact stress is compared between symmetric helical gear and asymmetric helical gear.


Energies ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 2299 ◽  
Author(s):  
Fekadu Maremi ◽  
Namkyu Lee ◽  
Geehong Choi ◽  
Taehwan Kim ◽  
Hyung Cho

The objective of this study is to design a broadband and wide-angle emitter based on metamaterials with a cut-off wavelength of 2.1 µm to improve the spectral efficiency of thermophotovoltaic emitters. To obtain broadband emission, we conducted the geometric parameter optimization of the number of stacked layers, the inner and outer radii of the nano-rings, and the thickness of the nano-rings. The numerical simulation results showed that the proposed emitter had an average emissivity of 0.97 within the targeted wavelength, which ranged from 0.2 µm to 2.1 µm. In addition, the presented multilayer nano-ring emitter obtained 79.6% spectral efficiency with an InGaAs band gap of 0.6 eV at 1400 K.


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