Fully CMOS-compatible top-down fabrication of sub-50nm silicon nanowire sensing devices

2014 ◽  
Vol 118 ◽  
pp. 47-53 ◽  
Author(s):  
Yordan M. Georgiev ◽  
Nikolay Petkov ◽  
Brendan McCarthy ◽  
Ran Yu ◽  
Vladimir Djara ◽  
...  
ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 2629-2636 ◽  
Author(s):  
Myeongwon Lee ◽  
Youngin Jeon ◽  
Taeho Moon ◽  
Sangsig Kim

Materials ◽  
2018 ◽  
Vol 11 (5) ◽  
pp. 785 ◽  
Author(s):  
Duy Tran ◽  
Thuy Pham ◽  
Bernhard Wolfrum ◽  
Andreas Offenhäusser ◽  
Benjamin Thierry

2012 ◽  
Vol 97 ◽  
pp. 157-161 ◽  
Author(s):  
M. Totaro ◽  
P. Bruschi ◽  
G. Pennelli

2012 ◽  
Vol 41 (6) ◽  
pp. 989-992 ◽  
Author(s):  
Y. Li ◽  
K. Buddharaju ◽  
N. Singh ◽  
S.J. Lee

2015 ◽  
Vol 26 (25) ◽  
pp. 259601
Author(s):  
Gabriel Vidal-Álvarez ◽  
Jordi Agustí ◽  
Francesc Torres ◽  
Gabriel Abadal ◽  
Núria Barniol ◽  
...  

2011 ◽  
Vol 1303 ◽  
Author(s):  
Sun Choi ◽  
Albert P. Pisano

ABSTRACTWe report simple and effective methods to develop long-term, stable silicon nanowire-based pH sensors and systematic studies of the performance of the developed sensors. In this work, we fabricate silicon nanowire pH sensors based on top-down fabrication processes such as E-beam lithography and conventional photolithography. In order to improve the stability of the sensor performance, the sensors are coated with a passivation layer (silicon nitride) for effective electrical insulation and ion-blocking. The stability, the pH sensitivity, and the repeatability of the sensor response are critically analyzed with regard to the physics of sensing interface between sample liquid and the sensing surface. The studies verify that the sensor with a passivation layer over critical thickness show long-term, stable sensor response without long-term drift. The studies also show the detection of pH level with silicon nanowire sensors is repeatable only after proper rinsing of sensor surfaces and there exists trade-off between the stability and the pH sensitivity of sensor response.


2016 ◽  
Vol 63 (2) ◽  
pp. 311-315 ◽  
Author(s):  
Yu Chen ◽  
Jinhong Guo ◽  
Hamidullah Muhammad ◽  
Yuejun Kang ◽  
Sunil K. Ary

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