CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

Based on the improvements of the fabrication technologies, the dimension of the device has decreased to tens of nanometer. The nano-technology has become intriguing to integrate semiconductor technologies into bio-related applications. As the consequence, silicon nanowires (Si NWs) have been proposed to detect proteins, DNA, virus, and ions etc. However, few of previous studies consider the possibility to merge with CMOS standard process. In this work, we announced CMOS compatible technique which is used to develop polysilicon nanowire field effect transistor (poly-Si NW FET) as a chemical sensor to address this issue.

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A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.4.38 ◽

2013 ◽

Vol 4 ◽

pp. 330-335 ◽

Cited By ~ 13

Author(s):

Denis E Presnov ◽

Sergey V Amitonov ◽

Pavel A Krutitskii ◽

Valentina V Kolybasova ◽

Igor A Devyatov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Silicon On Insulator ◽

Ph Change ◽

Maximum Charge ◽

Effect Transistor ◽

Cmos Compatible ◽

On Chip ◽

The One

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.

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Fabrication of Silicon Nanowire Field-Effect Transistor Biosensor by CMOS Compatible Top-Down Approach with Descum Process

Sensor Letters ◽

10.1166/sl.2009.1231 ◽

2009 ◽

Vol 7 (6) ◽

pp. 1039-1043 ◽

Cited By ~ 1

Author(s):

Young-Soo Sohn ◽

Gil Bum Kang ◽

Yong Tae Kim

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Top Down ◽

Effect Transistor ◽

Cmos Compatible

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Silicon-Nanowire-Based CMOS-Compatible Field-Effect Transistor Nanosensors for Ultrasensitive Electrical Detection of Nucleic Acids

Nano Letters ◽

10.1021/nl202303y ◽

2011 ◽

Vol 11 (9) ◽

pp. 3974-3978 ◽

Cited By ~ 189

Author(s):

Anran Gao ◽

Na Lu ◽

Pengfei Dai ◽

Tie Li ◽

Hao Pei ◽

...

Keyword(s):

Nucleic Acids ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Electrical Detection ◽

Effect Transistor ◽

Cmos Compatible

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Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Nano Letters ◽

10.1021/acs.nanolett.0c05051 ◽

2021 ◽

Author(s):

Xiwen Liu ◽

Dixiong Wang ◽

Kwan-Ho Kim ◽

Keshava Katti ◽

Jeffrey Zheng ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Scandium Nitride ◽

Effect Transistor ◽

Cmos Compatible

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Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽

10.3390/s21124213 ◽

2021 ◽

Vol 21 (12) ◽

pp. 4213

Author(s):

Seong-Kun Cho ◽

Won-Ju Cho

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Silicon On Insulator ◽

Sodium Ion ◽

Ion Sensor ◽

Highly Sensitive ◽

Selective Membrane ◽

Dual Gate ◽

Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

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Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate

ACS Sensors ◽

10.1021/acssensors.8b01394 ◽

2019 ◽

Vol 4 (2) ◽

pp. 427-433 ◽

Cited By ~ 3

Author(s):

Xi Chen ◽

Si Chen ◽

Qitao Hu ◽

Shi-Li Zhang ◽

Paul Solomon ◽

...

Keyword(s):

Noise Reduction ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Schottky Junction ◽

Effect Transistor ◽

Device Noise

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Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

MRS Proceedings ◽

10.1557/proc-1144-ll06-02 ◽

2008 ◽

Vol 1144 ◽

Author(s):

Pranav Garg ◽

Yi Hong ◽

Md. Mash-Hud Iqbal ◽

Stephen J. Fonash

Keyword(s):

Metal Oxide ◽

Silicon Nanowires ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Manufacturing Cost ◽

Effect Transistor ◽

The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

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