Ultra-violet nanoimprint lithography-compatible positive-tone electron beam resist for 3D hybrid nanostructures

2019 ◽  
Vol 213 ◽  
pp. 6-12 ◽  
Author(s):  
Takao Okabe ◽  
Hiroo Maebashi ◽  
Jun Taniguchi
Keyword(s):  
Electron Beam ◽  
Nanoimprint Lithography ◽  
Ultra Violet ◽  
Hybrid Nanostructures

Fabrication of Less than 20-nm-Diameter Nanodot Arrays Using Inorganic Electron Beam Resist and Post Exposure Bake

2011 ◽  
Vol 5 (3) ◽  
pp. 349-352 ◽  
Author(s):  
Jun Taniguchi ◽  
◽  
Tetsuro Manabe ◽  
Kiyoshi Ishikawa ◽  
Keyword(s):  
Electron Beam ◽  
Nanoimprint Lithography ◽  
Ultra Violet ◽  
Post Exposure ◽  
Array Pattern ◽  
Pattern Size ◽  
Nanodot Arrays ◽  
Post Exposure Bake ◽  
20 Nm ◽  
Acceleration Voltage

Next-generation NanoImprint Lithography (NIL) includes photolithography and high-voltage-acceleration (>50 kV) Electron-Beam Lithography (EBL) both of which are expensive, which is why Low-Acceleration-Voltage (LAV) EBL has attracted attention. We fabricated nanodot arrays with a diameter of 20 nm or less combining inorganic resist and LAV EBL. Using Post-Exposure Bake (PEB), we reduced dot-array pattern size and conducted Ultra-Violet (UV) NIL using these nanodot molds. The results we obtained using nanodot arrays 10 nm in diameter fabricated by EBL at an acceleration voltage of 4 kV with PEB yielded a checkerboard design 10 nm in diameter spaced at 20 nm intervals using 10 kV EB. This density corresponds to nanodot-arrays of 1 Tb/in2.

Advance in the Growth of Ordered Ge/Si Quantum Dots

2013 ◽  
Vol 320 ◽  
pp. 168-175
Author(s):  
Hai Peng Wang ◽  
Chong Wang ◽  
Jie Yu ◽  
Jie Yang ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Ultra Violet ◽  
Interference Lithography ◽  
Ion Beam Irradiation ◽  
Preparation Methods ◽  
Patterned Substrate ◽  
Si Quantum Dots ◽  
Lithography Technology

Recent progress in the growth of ordered Ge/Si quantum dots (QDs) is reviewed. We focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam irradiation. In addition, the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed, such as nanosphere lithography technology, extreme ultra-violet interference lithography technology, nanoimprint lithography technology, etc.

Electron beam photoresists for nanoimprint lithography

2002 ◽  
Vol 61-62 ◽  
pp. 385-392 ◽  
Author(s):  
C. Gourgon ◽  
C. Perret ◽  
G. Micouin
Keyword(s):  
Electron Beam ◽  
Nanoimprint Lithography

Integration of Top-Down and Bottom-Up Nanofabrication Schemes

2005 ◽  
Vol 901 ◽  
Author(s):  
Pascale Maury ◽  
Olga Crespo-Biel ◽  
Maria Peter ◽  
David N. Reinhoudt ◽  
Jurriaan Huskens
Keyword(s):  
Nanoimprint Lithography ◽  
Silicon Oxide ◽  
Hybrid Nanostructures ◽  
Self Assembled Monolayers ◽  
Layer By Layer ◽  
Top Down ◽  
Bottom Up ◽  
Lbl Assembly ◽  
Assembled Monolayers ◽  
20 Nm

AbstractThe fabrication of 3D nanostructures, which have tunable, sub-100 nm dimensions in all three directions, is a key issue of nanotechnology. Here we describe the integration of top-down nanoimprint lithography (NIL) and bottom-up layer-by-layer (LBL) assembly for the preparation of 3D hybrid nanostructures. NIL provided down to sub-100 nm poly(methylmethacrylate) (PMMA) structures. These were employed to fabricate patterned self-assembled monolayers of cyclodextrin (CD) host molecules on silicon oxide . The consecutive LBL assembly with adamantyl guest-functionalized dendrimers and CD-modified gold nanoparticles resulted in patterned multilayer structures with thicknesses of 3-30 nm. The x,y control by NIL and the z control by LBL assembly ultimately allowed the fabrication of circular structures with a radius of 25 nm and a thickness of 20 nm. The integration of the two methods has thus yielded a versatile 3D nanofabrication methodology comprising of 10-40 process steps.

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