Advance in the Growth of Ordered Ge/Si Quantum Dots

2013 ◽  
Vol 320 ◽  
pp. 168-175
Author(s):  
Hai Peng Wang ◽  
Chong Wang ◽  
Jie Yu ◽  
Jie Yang ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Ultra Violet ◽  
Interference Lithography ◽  
Ion Beam Irradiation ◽  
Preparation Methods ◽  
Patterned Substrate ◽  
Si Quantum Dots ◽  
Lithography Technology

Recent progress in the growth of ordered Ge/Si quantum dots (QDs) is reviewed. We focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam irradiation. In addition, the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed, such as nanosphere lithography technology, extreme ultra-violet interference lithography technology, nanoimprint lithography technology, etc.

Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography

2016 ◽  
Vol 852 ◽  
pp. 283-292
Author(s):  
Zheng Hang Xin ◽  
Chong Wang ◽  
Feng Qiu ◽  
Rong Fei Wang ◽  
Chen Li ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Nanosphere Lithography ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Patterned Substrate ◽  
Hexagonal Close Packed ◽  
Potential Applications ◽  
Focus Ion Beam ◽  
Si Quantum Dots

The recent process in the fabrication of the ordered Ge/Si quantum dots (QDs) is reviewed. The fabrication step generally started on the preparation of patterned substrate prepared in advance by using several interesting methods, such as photo lithography, focus ion beam (FIB), reactive ion etching (RIE), and extreme ultraviolet lithography (EUV-IL) et al, which are introduced briefly in this article. Here, we’d like to focus on the detailed process of nanosphere lithography (NSL) which has the advantages of less cost and higher product compared with the referred methods. The ordered Ge nanostructures always show as Hexagonal close-packed array on the patterned Si substrate and have the advantages of potential applications in electronic and optoelectronic devices.

Spatially arranged chains of Ge quantum dots grown on Si substrate prepatterned by ion-beam-assisted nanoimprint lithography

2016 ◽  
Vol 13 (10-12) ◽  
pp. 882-885 ◽  
Author(s):  
Anatoly Dvurechenskii ◽  
Zhanna Smagina ◽  
Pavel Novikov ◽  
Vladimir Zinovyev ◽  
Polina Kuchinskaya ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Si Substrate ◽  
Ge Quantum Dots

scholarly journals LIGHT EMMITTING RECOMBINATION IN HETEROSTRUCTURES GE/SI WITH QUANTUM DOTS FORMED WITH USING ION BEAM RADIATION

2020 ◽  
Author(s):  
Anatolievich Vladimir ◽  
Zhanna Smagina ◽  
Aigul Zinovieva ◽  
Anatoly Dvurechenskii ◽  
Aleksandr Mudryi
Keyword(s):  
Quantum Dots ◽  
Comparative Study ◽  
Ion Beam ◽  
Subsequent Annealing ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Beam Radiation

This work devotes to a comparative study of the photoluminescence of Ge/Si epitaxial structures with quantum dots created with using ion beam irradiation and structures with Ge nanoclusters formed as a result of the implantation of Ge ions into silicon and subsequent annealing.

Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

2013 ◽  
Vol 873 ◽  
pp. 479-485
Author(s):  
Xi Zhou ◽  
Chong Wang ◽  
Jie Yang ◽  
Ying Xia Jin ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Double Layer ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Si Quantum Dot ◽  
Spacer Layer ◽  
Beam Sputtering ◽  
Factor Interactions ◽  
Si Quantum Dots

A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.

Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

2019 ◽  
Vol 21 (45) ◽  
pp. 25467-25473 ◽  
Author(s):  
A. F. Zatsepin ◽  
Yu. A. Kuznetsova ◽  
C. H. Wong
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Amorphous Silica ◽  
Ion Beam ◽  
Silica Matrix ◽  
Radiation Defects ◽  
Silicon Quantum Dots ◽  
Si Quantum Dots

In this work, we report the mechanism of defects formation and discuss how the pulsed ion implantation actuates the process of silicon-quantum-dots formation in amorphous silica.

scholarly journals Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering

2011 ◽  
Vol 60 (9) ◽  
pp. 096101
Author(s):  
Zhang Xue-Gui ◽  
Wang Chong ◽  
Lu Zhi-Quan ◽  
Yang Jie ◽  
Li Liang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Si Quantum Dots

Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation

2009 ◽  
Vol 95 (6) ◽  
pp. 063104 ◽  
Author(s):  
M. Buljan ◽  
I. Bogdanović-Radović ◽  
M. Karlušić ◽  
U. V. Desnica ◽  
G. Dražić ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Long Range ◽  
Amorphous Matrix ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Bipolar Transistors ◽  
Ion Beam Irradiation ◽  
Physical Mechanisms ◽  
Dc Characteristics ◽  
Electrical Degradation ◽  
Physical Phenomena

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.

Pedigree Construction and SSR Analysis of Broomcorn Millet Mutant by 12C6+ Ion Beam Irradiation

2018 ◽  
Vol 44 (1) ◽  
pp. 144
Author(s):  
Tian-Peng LIU ◽  
Kong-Jun DONG ◽  
Xi-Cun DONG ◽  
Ji-Hong HE ◽  
Min-Xuan LIU ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Ssr Analysis ◽  
Broomcorn Millet
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