Non-volatile resistive switching memory device based on ZnO-graphene oxide embedded in a polymer matrix fabricated on a flexible PET substrate

2020 ◽  
Vol 233 ◽  
pp. 111436
Author(s):  
Jehova Jire L. Hmar
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Polymer Matrix ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Pet Substrate

Flexible Resistive Switching Memory Device Based on Graphene Oxide

2010 ◽  
Vol 31 (9) ◽  
pp. 1005-1007 ◽  
Author(s):  
Seul Ki Hong ◽  
Ji Eun Kim ◽  
Sang Ouk Kim ◽  
Sung-Yool Choi ◽  
Byung Jin Cho
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

2018 ◽  
Vol 520 ◽  
pp. 19-24 ◽  
Author(s):  
Bai Sun ◽  
Xuejiao Zhang ◽  
Guangdong Zhou ◽  
Tian Yu ◽  
Shuangsuo Mao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Zno Film ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Pet Substrate

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory
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