scholarly journals Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions

2019 ◽  
Vol 14 ◽  
pp. 21-28 ◽  
Author(s):  
Pingping Zheng ◽  
Bai Sun ◽  
Yuanzheng Chen ◽  
Hosameldeen Elshekh ◽  
Tian Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

A resistive switching memory device with a negative differential resistance at room temperature

2018 ◽  
Vol 113 (5) ◽  
pp. 053502 ◽  
Author(s):  
Mayameen S. Kadhim ◽  
Feng Yang ◽  
Bai Sun ◽  
Yushu Wang ◽  
Tao Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory
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