Improvement of Reliability Characteristics of TiO$_{2}$-Based Resistive Switching Memory Device with an Inserted ZnO Layer

2012 ◽  
Vol 51 ◽  
pp. 101101 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Bing Chen ◽  
Feifei Zhang ◽  
Bin Gao ◽  
...  
2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.


2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.


2020 ◽  
Vol 76 ◽  
pp. 105457 ◽  
Author(s):  
Anwarhussaini SD ◽  
Himabindu Battula ◽  
Pavan Kumar Reddy Boppidi ◽  
Souvik Kundu ◽  
Chanchal Chakraborty ◽  
...  

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