Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1315-1319 ◽  
Author(s):  
N. Mbaye ◽  
V. Pouget ◽  
F. Darracq ◽  
D. Lewis
Keyword(s):  
Single Event ◽  
Power Diodes ◽  
Burn Out

Single event burnout in power diodes: Mechanisms and models

2006 ◽  
Vol 46 (2-4) ◽  
pp. 317-325 ◽  
Author(s):  
A.M. Albadri ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
D.G. Walker
Keyword(s):  
Single Event ◽  
Power Diodes

Simulation of Single-Event Failure in Power Diodes

2002 ◽  
Author(s):  
D. G. Walker ◽  
T. S. Fisher ◽  
A. M. Al-badri ◽  
R. D. Schrimpf
Keyword(s):  
Heavy Ion ◽  
Feedback Mechanism ◽  
Single Event ◽  
Device Failure ◽  
Power Diodes ◽  
Blocking Voltage ◽  
First Time ◽  
Current Blocking ◽  
A Current ◽  
Better Than

Single-event burnout (SEB) is a catastrophic failure mechanism in power diodes that is initiated by the passage of a heavy ion through a diode in a current-blocking state. In this work, the physical mechanism responsible for device failure during SEB is investigated using transient, coupled electro-thermal, device simulations. For the first time, the effects of a thermal feedback mechanism have been examined and deemed crucial to predicting possible failure in power diodes. Results indicate that device failure is predicted for large blocking voltage near breakdown with a linear energy transfer (LET) of 30MeV/mg/cm2 only when thermal effects are included. However, without inclusion of the thermal model, no device failure is predicted. These results correspond to experimental observations better than any previous work.

Single event burnout of high-power diodes

1998 ◽  
Vol 146 (1-4) ◽  
pp. 596-600 ◽  
Author(s):  
K.H. Maier ◽  
A. Denker ◽  
P. Voss ◽  
H.-W. Becker
Keyword(s):  
High Power ◽  
Single Event ◽  
Power Diodes

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 1066-1073
Author(s):  
Arthur F. Witulski ◽  
Dennis R. Ball ◽  
Robert A. Johnson ◽  
Kenneth F. Galloway ◽  
Andrew L. Sternberg ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Single Event ◽  
Electrical Field ◽  
Power Diodes ◽  
Avalanche Generation ◽  
Power Densities ◽  
Degradation Effect ◽  
Insight Into

Ion-induced leakage current degradation, and single-event burnout may be manifestestations of the same device mechanisms in both silicon carbide power diodes and MOSFETs. In all cases there is a migration of the electrical field from the front body-drain interface to the back epi-drain n+ interface, with a peak exceeding the critical electric field of silicon carbide, causing avalanche generation which enables high short-duration power densities during an approximate 20 psec window after the ion strike. The degradation effect in JBS SiC diodes seems to be independent of the length of the epitaxial region for different voltage-rated diodes.

scholarly journals Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes

2015 ◽  
Vol 30 (5) ◽  
pp. 2474-2480 ◽  
Author(s):  
Tomoyuki Shoji ◽  
Shuichi Nishida ◽  
Kimimori Hamada ◽  
Hiroshi Tadano
Keyword(s):  
Single Event ◽  
Power Diodes

Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EP03 ◽  
Author(s):  
Tomoyuki Shoji ◽  
Shuichi Nishida ◽  
Kimimori Hamada ◽  
Hiroshi Tadano
Keyword(s):  
Simulation Studies ◽  
Single Event ◽  
Power Diodes

Non-destructive tester for single event burnout of power diodes

2001 ◽  
Vol 41 (9-10) ◽  
pp. 1725-1729 ◽  
Author(s):  
G. Busatto ◽  
F. Iannuzzo ◽  
F. Velardi ◽  
J. Wyss
Keyword(s):  
Single Event ◽  
Power Diodes ◽  
Non Destructive

Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes

2012 ◽  
Vol 59 (4) ◽  
pp. 880-885 ◽  
Author(s):  
Hiroaki Asai ◽  
Kenji Sugimoto ◽  
Isamu Nashiyama ◽  
Yoshiya Iide ◽  
Kensuke Shiba ◽  
...  
Keyword(s):  
Single Event ◽  
Power Diodes

Terrestrial neutron-induced single-event burnout in SiC power diodes

2011 ◽  
Author(s):  
Hiroaki Asai ◽  
Kenji Sugimoto ◽  
Isamu Nashiyama ◽  
Yoshiya Iide ◽  
Kensuke Shiba ◽  
...  
Keyword(s):  
Single Event ◽  
Power Diodes
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