New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 1066-1073
Author(s):  
Arthur F. Witulski ◽  
Dennis R. Ball ◽  
Robert A. Johnson ◽  
Kenneth F. Galloway ◽  
Andrew L. Sternberg ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Single Event ◽  
Electrical Field ◽  
Power Diodes ◽  
Avalanche Generation ◽  
Power Densities ◽  
Degradation Effect ◽  
Insight Into

Ion-induced leakage current degradation, and single-event burnout may be manifestestations of the same device mechanisms in both silicon carbide power diodes and MOSFETs. In all cases there is a migration of the electrical field from the front body-drain interface to the back epi-drain n+ interface, with a peak exceeding the critical electric field of silicon carbide, causing avalanche generation which enables high short-duration power densities during an approximate 20 psec window after the ion strike. The degradation effect in JBS SiC diodes seems to be independent of the length of the epitaxial region for different voltage-rated diodes.

Comparison of 1200 V silicon carbide Schottky diodes and silicon power diodes

2000 ◽  
Author(s):  
H.-R. Chang ◽  
R. Gupta ◽  
C. Winterhalter ◽  
E. Hanna
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Power Diodes

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

scholarly journals Modular Marx Generator Based on SiC-MOSFET Generating Adjustable Rectangular Pulses

Energies ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3492
Author(s):  
Yahia Achour ◽  
Jacek Starzyński ◽  
Jacek Rąbkowski
Keyword(s):  
Silicon Carbide ◽  
Repetition Rate ◽  
Pulse Width ◽  
Biomedical Applications ◽  
Living Cells ◽  
Marx Generator ◽  
Electrical Field ◽  
Rectangular Shape ◽  
Overall Performance ◽  
Pulsed Electrical Field

The paper introduces a new design of Marx generator based on modular stages using Silicon Carbide MOSFETs (SiC-MOSFET) aimed to be used in biomedical applications. In this process, living cells are treated with intense nanosecond Pulsed Electrical Field (nsPEF). The electric field dose should be controlled by adjusting the pulse parameters such as amplitude, repetition rate and pulse-width. For this purpose, the structure of the proposed generator enables negative pulses with a quasi-rectangular shape, controllable amplitude, pulse-width and repetition-rate. A complete simulation study was conducted in ANSYS-Simplorer to verify the overall performance. A compact, modular prototype of Marx generator was designed with 1.7 kV rated SiC-MOSFETs and, finally, a set of experiments confirmed all expected features.

Single event burnout in power diodes: Mechanisms and models

2006 ◽  
Vol 46 (2-4) ◽  
pp. 317-325 ◽  
Author(s):  
A.M. Albadri ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
D.G. Walker
Keyword(s):  
Single Event ◽  
Power Diodes

Analysis of Forward Surge Performance of SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 621-624 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Nathanael Cueva ◽  
Tony Witt ◽  
Richard L. Woodin
Keyword(s):  
Silicon Carbide ◽  
Failure Analysis ◽  
Ohmic Contact ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Device Failure ◽  
Electrical Failure ◽  
The Impact ◽  
Surge Current

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

Silicon Carbide Power Diodes as Radiation Detectors

2006 ◽  
pp. 1465-1468
Author(s):  
Bernard F. Phlips ◽  
Karl D. Hobart ◽  
Francis J. Kub ◽  
Robert E. Stahlbush ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Radiation Detectors ◽  
Power Diodes

Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Efficiency ◽  
Schottky Diodes ◽  
Power Converter ◽  
Electronic Systems ◽  
High Temperature Electronics ◽  
New Material ◽  
Silicon Power Devices ◽  
Relationship Of

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

Failure mechanisms in two-layer undrained slopes

2020 ◽  
Vol 57 (10) ◽  
pp. 1617-1621
Author(s):  
Shuangfeng Guo ◽  
D.V. Griffiths
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Slope Angle ◽  
Strength Ratio ◽  
The Finite Element Method ◽  
Stability Analyses ◽  
Shallow Failure ◽  
Insight Into

This note presents results of stability analyses of two-layer undrained slopes by the finite element method. The study focuses on the circumstances under which either deep or shallow failure mechanisms occur, as a function of the strength ratio of the layers, slope angle, and foundation depth ratio. Improved knowledge of the location of the critical failure mechanism(s) in two-layer systems will give engineers better insight into where to focus their attention in terms or remediation or reinforcement to preserve stability.

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