Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1320-1322
Author(s):  
Jun Yeong Lim ◽  
Ilgu Yun
2009 ◽  
Vol 106 (5) ◽  
pp. 054506 ◽  
Author(s):  
G. Betti Beneventi ◽  
A. Calderoni ◽  
P. Fantini ◽  
L. Larcher ◽  
P. Pavan

Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  

Author(s):  
Luca Crespi ◽  
Andrea Lacaita ◽  
Mattia Boniardi ◽  
Enrico Varesi ◽  
Andrea Ghetti ◽  
...  

2009 ◽  
Vol 94 (11) ◽  
pp. 113503 ◽  
Author(s):  
S.-L. Wang ◽  
C.-Y. Chen ◽  
M.-K. Hsieh ◽  
W.-C. Lee ◽  
A. H. Kung ◽  
...  

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 846-846
Author(s):  
John Hoang ◽  
Meihua Shen ◽  
Thorsten Lill ◽  
Danna Qian ◽  
Aaron Routzahn ◽  
...  

2019 ◽  
Vol 1237 ◽  
pp. 042064
Author(s):  
Yuhan Wang ◽  
Ziqiang Zeng ◽  
Yuchan Wang ◽  
Xia Xu ◽  
Liangling Gu

2017 ◽  
Vol 634 ◽  
pp. 141-146
Author(s):  
J.H. Park ◽  
J.H. Kim ◽  
D.-H. Ko ◽  
Z. Wu ◽  
D.H. Ahn ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document