Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFET

Microelectronics Reliability ◽

10.1016/j.microrel.2019.113444 ◽

2019 ◽

Vol 100-101 ◽

pp. 113444

Author(s):

Giyoun Roh ◽

Hyeokjin Kim ◽

Youngkyu Kwon ◽

Bongkoo Kang

Keyword(s):

Layer Thickness ◽

Interfacial Layer ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.033 ◽

2013 ◽

Vol 109 ◽

pp. 314-317 ◽

Author(s):

M. Toledano-Luque ◽

B. Kaczer ◽

M. Aoulaiche ◽

A. Spessot ◽

Ph.J. Roussel ◽

...

Keyword(s):

Analytical Model ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

Journal of Semiconductors ◽

10.1088/1674-4926/36/1/014007 ◽

2015 ◽

Vol 36 (1) ◽

pp. 014007 ◽

Author(s):

Shangqing Ren ◽

Bo Tang ◽

Hao Xu ◽

Weichun Luo ◽

Zhaoyun Tang ◽

...

Keyword(s):

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3078540 ◽

2021 ◽

pp. 1-1

Author(s):

Rui Gao ◽

Jigang Ma ◽

Xiaoling Lin ◽

Xiaowen Zhang ◽

Yunfei En ◽

...

Keyword(s):

Comparative Study ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796085 ◽

2008 ◽

Author(s):

D.P. Ioannou ◽

S. Mittl ◽

G. LaRosa

Keyword(s):

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.012 ◽

2010 ◽

Vol 50 (5) ◽

pp. 614-617 ◽

Author(s):

H.W. Chen ◽

C.H. Liu

Keyword(s):

Gate Dielectrics ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2021.3134902 ◽

2021 ◽

pp. 1-1

Author(s):

Yen-Pu Chen ◽

Mengwei Si ◽

Bikram Kishore Mahajan ◽

Zehao Lin ◽

Peide D. Ye ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Positive Bias ◽

Temperature Instability ◽

Hot Carrier ◽

Bias Temperature Instability ◽

Hot Carrier Degradation

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Abnormal Positive Bias Temperature Instability induced by Dipole Doped N-type MOSCAP

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2932603 ◽

2019 ◽

pp. 1-1

Author(s):

Fu-Yuan Jin ◽

Ting-Chang Chang ◽

Chien-Yu Lin ◽

Jih-Chien Liao ◽

Fong-Min Ciou ◽

...

Keyword(s):

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Bias Temperature Instability Characterization of Advanced Gate Stacks

ECS Meeting Abstracts ◽

10.1149/ma2007-01/14/662 ◽

2007 ◽

Keyword(s):

Gate Stacks ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Applied Physics Letters ◽

10.1063/1.4811274 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232909 ◽

Author(s):

Han Jin Lim ◽

Youngkuk Kim ◽

In Sang Jeon ◽

Jaehyun Yeo ◽

Badro Im ◽

...

Keyword(s):

Metal Oxide ◽

Field Emission ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability

Solid-State Electronics ◽

10.1016/j.sse.2017.06.003 ◽

2017 ◽

Vol 135 ◽

pp. 37-42 ◽

Author(s):

Rameez Samnakay ◽

Alexander A. Balandin ◽

Purushothaman Srinivasan

Keyword(s):

Flicker Noise ◽

Temperature Instability ◽

Bias Temperature Instability

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