Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Han Jin Lim; Youngkuk Kim; In Sang Jeon; Jaehyun Yeo; Badro Im; Soojin Hong; Bong-Hyun Kim; Seok-Woo Nam; Ho-kyu Kang; E. S. Jung

doi:10.1063/1.4811274

Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Applied Physics Letters ◽

10.1063/1.4811274 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232909 ◽

Cited By ~ 8

Author(s):

Han Jin Lim ◽

Youngkuk Kim ◽

In Sang Jeon ◽

Jaehyun Yeo ◽

Badro Im ◽

...

Keyword(s):

Metal Oxide ◽

Field Emission ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks

Applied Physics Letters ◽

10.1063/1.3025420 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193506 ◽

Cited By ~ 2

Author(s):

J. C. Liao ◽

Y. K. Fang ◽

C. H. Chen ◽

Y. T. Hou ◽

P. F. Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Nitrogen Incorporation ◽

High K

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The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2928235 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202901 ◽

Cited By ~ 7

Author(s):

De-Cheng Hsu ◽

Ingram Yin-ku Chang ◽

Ming-Tsong Wang ◽

Pi-Chun Juan ◽

Y. L. Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices

Micro & Nano Letters ◽

10.1049/mnl.2018.0012 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1151-1154

Author(s):

Lijie Li ◽

Chan Shan ◽

Ying Wang ◽

Xin Luo

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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A 65 nm Complementary Metal–Oxide–Semiconductor 400 ns Measurement Delay Negative-Bias-Temperature-Instability Recovery Sensor with Minimum Assist Circuit

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04de06 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DE06 ◽

Cited By ~ 2

Author(s):

Takashi Matsumoto ◽

Hiroaki Makino ◽

Kazutoshi Kobayashi ◽

Hidetoshi Onodera

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Measurement Delay

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Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Cited By ~ 16

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics

Applied Physics Letters ◽

10.1063/1.4870047 ◽

2014 ◽

Vol 104 (12) ◽

pp. 122105 ◽

Cited By ~ 14

Author(s):

Atthawut Chanthaphan ◽

Takuji Hosoi ◽

Yuki Nakano ◽

Takashi Nakamura ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Aluminum Oxynitride ◽

Temperature Instability ◽

Bias Temperature Instability

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Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.99154 ◽

1988 ◽

Vol 52 (16) ◽

pp. 1344-1346 ◽

Cited By ~ 15

Author(s):

D. Lu ◽

G. A. Ruggles ◽

J. J. Wortman

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Processing Conditions ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Semiconductor Structures ◽

Bias Temperature Instability

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