Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Microelectronics Reliability ◽

10.1016/j.microrel.2020.113750 ◽

2020 ◽

Vol 112 ◽

pp. 113750

Author(s):

Flavien Sagouo Minko ◽

Tinus Stander

Keyword(s):

V Band ◽

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An Interstage-Reflectionless V-Band Radiometer With Capacitor-Reused Absorptive Matching in 0.13-μm SiGe BiCMOS

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2021.3107290 ◽

2021 ◽

pp. 1-14

Author(s):

Xiaojun Bi ◽

Zilan Cao ◽

Zhaoming Feng ◽

Chaodi Sheng ◽

Qinfen Xu

Keyword(s):

V Band ◽

Sige Bicmos ◽

Band Radiometer

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Dual Q/V-Band SiGe BiCMOS Low Noise Amplifiers Using Q-enhanced Metamaterial Transmission Lines

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2020.3020575 ◽

2020 ◽

pp. 1-1

Author(s):

Donghyun Lee ◽

Cam Nguyen

Keyword(s):

Transmission Lines ◽

Low Noise ◽

Low Noise Amplifiers ◽

V Band ◽

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Design of a low noise, low power V-band low noise amplifier in 130 nm SiGe BiCMOS process technology

2017 International Semiconductor Conference (CAS) ◽

10.1109/smicnd.2017.8101223 ◽

2017 ◽

Author(s):

M. Fanoro ◽

S. S. Olokede ◽

S. Sinha

Keyword(s):

Low Power ◽

Low Noise ◽

Low Noise Amplifier ◽

Process Technology ◽

V Band ◽

Sige Bicmos ◽

Bicmos Process ◽

Noise Amplifier

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A High-Gain Power-Efficient Wideband V-Band LNA in 0.18- SiGe BiCMOS

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2016.2537040 ◽

2016 ◽

Vol 26 (4) ◽

pp. 276-278 ◽

Author(s):

Sunhwan Jang ◽

Cam Nguyen

Keyword(s):

High Gain ◽

Power Efficient ◽

V Band ◽

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A V-band Low-Power Compact LNA in 130-nm SiGe BiCMOS Technology

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2021.3062983 ◽

2021 ◽

pp. 1-1

Author(s):

Batuhan Sutbas ◽

Herman Jalli Ng ◽

Jan Wessel ◽

Alexander Koelpin ◽

Gerhard Kahmen

Keyword(s):

Low Power ◽

V Band ◽

Bicmos Technology ◽

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Highly Linear Low Power V-Band Down-Conversion Mixer in SiGe BiCMOS Technology

2020 IEEE Radio and Wireless Symposium (RWS) ◽

10.1109/rws45077.2020.9050103 ◽

2020 ◽

Author(s):

Zahra Marvi ◽

Ehsan Ashoori

Keyword(s):

Low Power ◽

V Band ◽

Bicmos Technology ◽

Sige Bicmos ◽

Down Conversion

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A V-Band Power Amplifier With Integrated Wilkinson Power Dividers-Combiners and Transformers in 0.18- $\mu$ m SiGe BiCMOS

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2018.2850899 ◽

2019 ◽

Vol 66 (3) ◽

pp. 337-341 ◽

Author(s):

Kyoungwoon Kim ◽

Cam Nguyen

Keyword(s):

Power Amplifier ◽

Power Dividers ◽

V Band ◽

Sige Bicmos ◽

Wilkinson Power Dividers

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V-band dual-conversion down-converter with Schottky-diode ring-mixer using 0.35μm SiGe BiCMOS process

2015 Asia-Pacific Microwave Conference (APMC) ◽

10.1109/apmc.2015.7411813 ◽

2015 ◽

Author(s):

Jen-Chieh Kao ◽

Chinchun Meng ◽

Tai-Lin Lo ◽

Guo-Wei Huang

Keyword(s):

Schottky Diode ◽

V Band ◽

Sige Bicmos ◽

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A V-Band Two Pole High-Pass Filter for Frequency Quadrupler Design

International Journal on Communications Antenna and Propagation (IRECAP) ◽

10.15866/irecap.v6i1.8322 ◽

2016 ◽

Vol 6 (1) ◽

pp. 56

Author(s):

Maryam Abata ◽

Mahmoud Mehdi ◽

Said Mazer ◽

Moulhime El Bekkali ◽

Catherine Algani

Keyword(s):

Pass Filter ◽

High Pass Filter ◽

V Band ◽

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ITALSAT Ka, Q and V band Cross Polar Discrimination Statistics Measured in Pomezia, Italy

2020 XXXIIIrd General Assembly and Scientific Symposium of the International Union of Radio Science ◽

10.23919/ursigass49373.2020.9232173 ◽

2020 ◽

Author(s):

Eric Regonesi ◽

Antonio Martellucci ◽

Carlo Riva ◽

Lorenzo Luini

Keyword(s):

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