An Interstage-Reflectionless V-Band Radiometer With Capacitor-Reused Absorptive Matching in 0.13-μm SiGe BiCMOS

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2021.3107290 ◽

2021 ◽

pp. 1-14

Author(s):

Xiaojun Bi ◽

Zilan Cao ◽

Zhaoming Feng ◽

Chaodi Sheng ◽

Qinfen Xu

Keyword(s):

V Band ◽

Sige Bicmos ◽

Band Radiometer

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Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Microelectronics Reliability ◽

10.1016/j.microrel.2020.113750 ◽

2020 ◽

Vol 112 ◽

pp. 113750

Author(s):

Flavien Sagouo Minko ◽

Tinus Stander

Keyword(s):

V Band ◽

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Dual Q/V-Band SiGe BiCMOS Low Noise Amplifiers Using Q-enhanced Metamaterial Transmission Lines

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2020.3020575 ◽

2020 ◽

pp. 1-1

Author(s):

Donghyun Lee ◽

Cam Nguyen

Keyword(s):

Transmission Lines ◽

Low Noise ◽

Low Noise Amplifiers ◽

V Band ◽

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Design of a low noise, low power V-band low noise amplifier in 130 nm SiGe BiCMOS process technology

2017 International Semiconductor Conference (CAS) ◽

10.1109/smicnd.2017.8101223 ◽

2017 ◽

Author(s):

M. Fanoro ◽

S. S. Olokede ◽

S. Sinha

Keyword(s):

Low Power ◽

Low Noise ◽

Low Noise Amplifier ◽

Process Technology ◽

V Band ◽

Sige Bicmos ◽

Bicmos Process ◽

Noise Amplifier

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A High-Gain Power-Efficient Wideband V-Band LNA in 0.18- SiGe BiCMOS

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2016.2537040 ◽

2016 ◽

Vol 26 (4) ◽

pp. 276-278 ◽

Author(s):

Sunhwan Jang ◽

Cam Nguyen

Keyword(s):

High Gain ◽

Power Efficient ◽

V Band ◽

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A V-band Low-Power Compact LNA in 130-nm SiGe BiCMOS Technology

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2021.3062983 ◽

2021 ◽

pp. 1-1

Author(s):

Batuhan Sutbas ◽

Herman Jalli Ng ◽

Jan Wessel ◽

Alexander Koelpin ◽

Gerhard Kahmen

Keyword(s):

Low Power ◽

V Band ◽

Bicmos Technology ◽

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A Low Switching-Loss W-Band Radiometer Utilizing a Single-Pole-Double-Throw Distributed Amplifier in 0.13- $\mu{\hbox {m}}$ SiGe BiCMOS

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2015.2504499 ◽

2016 ◽

Vol 64 (1) ◽

pp. 226-238 ◽

Author(s):

Xiaojun Bi ◽

M. Annamalai. Arasu ◽

Yao Zhu ◽

Minkyu Je

Keyword(s):

Switching Loss ◽

Distributed Amplifier ◽

W Band ◽

Sige Bicmos ◽

Band Radiometer

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A V-band radiometer MMIC for geostationary atmospheric

2015 IEEE International Wireless Symposium (IWS 2015) ◽

10.1109/ieee-iws.2015.7164584 ◽

2015 ◽

Author(s):

Tang Liu ◽

Kewu Han ◽

Yu Ye ◽

Jian Zhang

Keyword(s):

V Band ◽

Band Radiometer

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Highly Linear Low Power V-Band Down-Conversion Mixer in SiGe BiCMOS Technology

2020 IEEE Radio and Wireless Symposium (RWS) ◽

10.1109/rws45077.2020.9050103 ◽

2020 ◽

Author(s):

Zahra Marvi ◽

Ehsan Ashoori

Keyword(s):

Low Power ◽

V Band ◽

Bicmos Technology ◽

Sige Bicmos ◽

Down Conversion

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A V-Band Power Amplifier With Integrated Wilkinson Power Dividers-Combiners and Transformers in 0.18- $\mu$ m SiGe BiCMOS

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2018.2850899 ◽

2019 ◽

Vol 66 (3) ◽

pp. 337-341 ◽

Author(s):

Kyoungwoon Kim ◽

Cam Nguyen

Keyword(s):

Power Amplifier ◽

Power Dividers ◽

V Band ◽

Sige Bicmos ◽

Wilkinson Power Dividers

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A fully encapsulated waveguide coupled passive imaging W-band radiometer module with RF frontend IC in a SiGe-BiCMOS technology

2016 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2016.7540090 ◽

2016 ◽

Author(s):

Andreas Strodl ◽

Alina C. Bunea ◽

Vaclav Valenta ◽

Rolf Johnsson ◽

Shakila B. Reyaz ◽

...

Keyword(s):

Passive Imaging ◽

W Band ◽

Bicmos Technology ◽

Sige Bicmos ◽

Band Radiometer

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