Analytical model for total ionizing dose-induced excess base current in PNP BJTs

2020 ◽  
Vol 113 ◽  
pp. 113939
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L. Li ◽  
X.C. Chen ◽  
X.J. Li ◽  
Z.H. Li ◽  
Y. Jian ◽  
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Analytical Model ◽  
Total Ionizing Dose ◽  
Base Current ◽  
Excess Base

Modelling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation

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Xiao-chi Chen ◽  
Yuan Jian ◽  
Xu-qiang Liu ◽  
Ze-hong Lia ◽  
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Excess Base

scholarly journals Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors

2020 ◽  
Vol 69 (1) ◽  
pp. 018502
Author(s):  
Lei Dong ◽  
Jian-Qun Yang ◽  
Zhao-Feng Zhen ◽  
Xing-Ji Li
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Thermal Treatment ◽  
Bipolar Transistors ◽  
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scholarly journals Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors

2018 ◽  
Vol 65 (8) ◽  
pp. 1488-1495 ◽  
Author(s):  
B. S. Tolleson ◽  
P. C. Adell ◽  
B. Rax ◽  
H. J. Barnaby ◽  
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Base Current ◽  
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ANALYTICAL MODEL OF SUPEREXCHANGE

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-911-C8-912
Author(s):  
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V. T. Kalinnikov
Keyword(s):  
Analytical Model
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