Modelling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation

2021 ◽  
pp. 1-1
Author(s):  
Lei Li ◽  
Xiao-chi Chen ◽  
Yuan Jian ◽  
Xu-qiang Liu ◽  
Ze-hong Lia ◽  
...  
Keyword(s):  
Base Current ◽  
Excess Base

Analytical model for total ionizing dose-induced excess base current in PNP BJTs

2020 ◽  
Vol 113 ◽  
pp. 113939
Author(s):  
L. Li ◽  
X.C. Chen ◽  
X.J. Li ◽  
Z.H. Li ◽  
Y. Jian ◽  
...  
Keyword(s):  
Analytical Model ◽  
Total Ionizing Dose ◽  
Base Current ◽  
Excess Base

scholarly journals Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors

2020 ◽  
Vol 69 (1) ◽  
pp. 018502
Author(s):  
Lei Dong ◽  
Jian-Qun Yang ◽  
Zhao-Feng Zhen ◽  
Xing-Ji Li
Keyword(s):  
Thermal Treatment ◽  
Bipolar Transistors ◽  
Base Current ◽  
Excess Base

scholarly journals Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors

2018 ◽  
Vol 65 (8) ◽  
pp. 1488-1495 ◽  
Author(s):  
B. S. Tolleson ◽  
P. C. Adell ◽  
B. Rax ◽  
H. J. Barnaby ◽  
A. Privat ◽  
...  
Keyword(s):  
Bipolar Junction Transistors ◽  
Base Current ◽  
Improved Model ◽  
Excess Base

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

scholarly journals Lightning Channel-Base Current Identification as Solution of a Volterralike Integral Equation

2008 ◽  
Vol 2 (1) ◽  
pp. 160-165 ◽  
Author(s):  
Federico Delfino ◽  
Renato Procopio ◽  
Mansueto Rossi
Keyword(s):  
Integral Equation ◽  
Numerical Simulations ◽  
Time Domain ◽  
Measurement Noise ◽  
Induction Field ◽  
Base Current ◽  
Lightning Channel ◽  
Regularization Techniques ◽  
Ill Conditioning ◽  
The Time Domain

In this paper, a novel procedure to reconstruct the lightning channel-base current starting from the measurement of the induction field generated by it is presented. The procedure is based on a suitable mathematical manipulation of the equation expressing the induction field in the time domain, in order to transform it into a Volterra-like integral equation. Such kind of equations can be easily numerically solved without resorting to any sort of regularization techniques as they are not affected by the typical ill-conditioning of the inverse problems. The developed algorithm has been validated by means of several numerical simulations, which have shown its effectiveness also in presence of measurement noise on the induction field values.

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