Excess Base Current Model for Gamma-Irradiated SiGe Bipolar Transistors

2007 ◽  
Author(s):  
M. Ullan ◽  
J. P. Alegre ◽  
S. Diez ◽  
G. Pellegrini ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Current Model ◽  
Bipolar Transistors ◽  
Base Current ◽  
Gamma Irradiated ◽  
Excess Base

scholarly journals Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors

2020 ◽  
Vol 69 (1) ◽  
pp. 018502
Author(s):  
Lei Dong ◽  
Jian-Qun Yang ◽  
Zhao-Feng Zhen ◽  
Xing-Ji Li
Keyword(s):  
Thermal Treatment ◽  
Bipolar Transistors ◽  
Base Current ◽  
Excess Base

Electrical Measurement of the Bandgap of N+ and P+ SiGe Formed by Ge Ion Implantation

1997 ◽  
Vol 500 ◽  
Author(s):  
Akira Nishiyama ◽  
Osamu Arisumi ◽  
Makoto Yoshimi
Keyword(s):  
Ion Implantation ◽  
Theoretical Calculation ◽  
Temperature Dependence ◽  
Electrical Measurement ◽  
Bipolar Transistors ◽  
Floating Body ◽  
High Dose ◽  
Base Current ◽  
Source Regions ◽  
Heavily Doped

ABSTRACTN+ and p+ SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n+ layers than that for p+ layers.

Base current analysis of poly-Si emitter bipolar transistors

1985 ◽  
Author(s):  
B. Benna ◽  
T. Meister ◽  
H. Schaber ◽  
A.W. Wieder
Keyword(s):  
Bipolar Transistors ◽  
Current Analysis ◽  
Base Current

Comparison of hot-carrier and radiation induced increases in base current in bipolar transistors

1994 ◽  
Vol 41 (6) ◽  
pp. 2567-2573 ◽  
Author(s):  
R.L. Pease ◽  
S.L. Kosier ◽  
R.D. Schrimpf ◽  
W.E. Combs ◽  
M. Davey ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Hot Carrier ◽  
Base Current ◽  
Radiation Induced

Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

1991 ◽  
Vol 220 ◽  
Author(s):  
Ž Matutinović-Krstelj ◽  
E. J. Prinz ◽  
P. V. Schwartz ◽  
J. C. Sturm
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Thermal Chemical Vapor Deposition ◽  
Base Current ◽  
Different Temperatures ◽  
High Reduction

ABSTRACTA reduction of parasitic tunneling current by three orders of magnitude in epitaxial p+-n+ junctions grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) compared to previously published ion implantation results is reported. These results are very important for the reduction of base current in scaled homojunction and Si/SiGe/Si heterojunction bipolar transistors. High reduction in tunneling currents allows higher limits to transistor base and emitter dopings. Significant tunneling was observed when the doping levels at the lighter doped side of the junction were of the order of 1×1019cm−3 for both Si/Si and SiGe/Si devices. These results were confirmed by I-V measurements performed at different temperatures. Since the tunneling current is mediated by midgap states at the junction, these results demonstrate the high quality of the epitaxial interface.

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