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Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
Microelectronics Reliability
◽
10.1016/j.microrel.2021.114273
◽
2021
◽
pp. 114273
Author(s):
D. Danković
◽
V. Davidović
◽
S. Golubović
◽
S. Veljković
◽
N. Mitrović
◽
...
Keyword(s):
Channel Power
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31st European Conference on Optical Communications (ECOC 2005)
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Optimal innovation investment: the role of subsidy schemes and supply chain channel power structure
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Stochastic effects when determining the maximum RBMK channel power
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pp. 73-76
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◽
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Stochastic Effects
◽
Channel Power
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Analysis of dynamic channel power equalization by using nonlinear amplifying Sagnac interferometer for ASK-WDM optical transmission
10.1117/12.519969
◽
2004
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Feng Qu
◽
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◽
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Keyword(s):
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◽
Sagnac Interferometer
◽
Channel Power
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Power Equalization
◽
Dynamic Channel
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Impact of Negative Bias Temperature Instabilities on Lifetime in p-channel Power VDMOSFETs
2007 8th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services
◽
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◽
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Channel Power
◽
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Channel Power in Business Markets:
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Decision analysis of supply chains considering corporate social responsibility and government subsidy under different channel power structures
Annals of Operations Research
◽
10.1007/s10479-021-04213-x
◽
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Author(s):
Yong Liu
◽
Wenwen Ren
◽
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◽
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Keyword(s):
Corporate Social Responsibility
◽
Social Responsibility
◽
Decision Analysis
◽
Supply Chains
◽
Government Subsidy
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Power Structures
◽
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Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature
IEEE Transactions on Electron Devices
◽
10.1109/ted.2021.3139561
◽
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◽
pp. 1-5
Author(s):
Yajie Xin
◽
Wanjun Chen
◽
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◽
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◽
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◽
...
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High Temperature
◽
Short Channel
◽
Channel Power
◽
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Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation
10.1109/miel52794.2021.9569096
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2021
◽
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◽
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