Thickness dependence of the electro-mechanical response of sputter-deposited Mo thin films on polyimide: Insights from in situ synchrotron diffraction tensile tests

2017 ◽  
Vol 697 ◽  
pp. 17-23 ◽  
Author(s):  
Tanja Jörg ◽  
Megan J. Cordill ◽  
Robert Franz ◽  
Christoph Kirchlechner ◽  
Daniel M. Többens ◽  
...  
2007 ◽  
Vol 1027 ◽  
Author(s):  
Geandier Guillaume ◽  
Renault Pierre-Olivier ◽  
Goudeau Philippe ◽  
Eric Le Bourhis ◽  
Girault Baptiste

AbstractUnderstanding the mechanical behaviour of nano-structured thin films in relation to their structure, in particular to the grain size, is of high importance for the development of technological applications. Model nanometric multilayer W/Au systems exhibiting different structures are elaborated. These films are supported by a (thin) polyimide substrate. Films mechanical response is characterized experimentally by tensile tests carried out in-situ in a X-ray diffractometer installed on a synchrotron source. X-ray diffraction in transmission geometry has been used to study the deformations of both phases as a function of applied load. This geometry has been developed in the aim of optimizing the experiment time.


1997 ◽  
Vol 292 (1-2) ◽  
pp. 277-281 ◽  
Author(s):  
D.K. Aswal ◽  
S.K. Gupta ◽  
Savita N. Narang ◽  
S.C. Sabharwal ◽  
M.K. Gupta

Author(s):  
Zon MORI ◽  
Yuichiro ISHIZAKI ◽  
Toshiya DOI ◽  
Yoshinori HAKURAKU ◽  
Michiya OKADA ◽  
...  

1986 ◽  
Vol 77 ◽  
Author(s):  
J. C. Hensel ◽  
J. M. Vandenberg ◽  
L. F. Mattheiss ◽  
F. C. Unterwald ◽  
A. Maury

ABSTRACTThe formation of TiSi2 thin films on Si has been investigated by in situ x-ray diffraction and by electrical transport. The x-ray results show unequivocally that the staging proceeds through two orthorhombic polytypes of TiSi2 according to the sequence: sputter-deposited metallic Ti films on Si (001) → TiSi2 (C49 structure) → TiSi2 (C54 structure), with no evidence of lower suicides. Electrical transport shows metallic behavior for all phases and distinctive features in the annealing curves which correlate with the structural transformations. Most importantly, the resistivity, characteristically very high for the C49 phase, undergoes a precipitous drop at the C49 → C54 transition. Total energies for both phases are calculated and, consistent with the occurrence of a structural phase transformation, are found not to differ appreciably.


1999 ◽  
Vol 354 (1-2) ◽  
pp. 195-200 ◽  
Author(s):  
Z. Mori ◽  
S. Nozoe ◽  
N. Yokoyama ◽  
S. Koba ◽  
T. Doi ◽  
...  

1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.


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