On the enlargement of the lattice parameter c in sputter deposited in situ prepared thin films of YBa2Cu3Ox

1997 ◽  
Vol 292 (1-2) ◽  
pp. 277-281 ◽  
Author(s):  
D.K. Aswal ◽  
S.K. Gupta ◽  
Savita N. Narang ◽  
S.C. Sabharwal ◽  
M.K. Gupta
Keyword(s):  
Thin Films ◽  
Lattice Parameter ◽  
Sputter Deposited

Control of Microstructure and Stress in Sputtered Tungsten Thin Films on Silicon

1991 ◽  
Vol 226 ◽  
Author(s):  
R.R. Kola ◽  
G.K. Celler
Keyword(s):  
Thin Films ◽  
Lattice Parameter ◽  
In Situ Stress ◽  
X Ray ◽  
Β Phase ◽  
Sputter Deposited ◽  
Lithographic Masks ◽  
In Situ Stress Measurements ◽  
Phase Stresses

AbstractTungsten is attractive for VLSI device metallization because of its high conductivity and resistance to interdiffusion and electromigration. It is also one of the best absorber metals for x-ray lithographic masks. To minimize distortions in an x-ray mask, intrinsic stresses in the absorber films have to be low and reproducible. The physical properties of thin films are very dependent on their microstructure. We present the results of a study of the microstructural evolution and the resulting internal stress of rf sputter-deposited W films as a function of rf power, deposition temperature, and argon pressure. By controlling the nucleating phase and mobility of the adatoms, we have produced W films with low stresses (<±50 MPa). The lattice parameter and the argon content in W films increased with decreasing argon deposition pressure. It was found that a low base pressure (<10−7 torr) is necessary to produce stable α-phase W and to eliminate the metastable β-phase. Stresses in the W films were not affected bysubsequent anneals in vacuum at 200 °C for 50 hrs. In-situ stress measurements indicated stress relaxation by plastic deformation above 300 °C.

scholarly journals 2-Step In-situ Annealing of Sputter Deposited MgB2 Thin Films

2003 ◽  
Vol 38 (11) ◽  
pp. 635-638
Author(s):  
Zon MORI ◽  
Yuichiro ISHIZAKI ◽  
Toshiya DOI ◽  
Yoshinori HAKURAKU ◽  
Michiya OKADA ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposited ◽  
Mgb2 Thin Films

Electrical Transport and In-Situ X-Ray Studies of the Formation of TiSi2 Thin Films on Si

1986 ◽  
Vol 77 ◽  
Author(s):  
J. C. Hensel ◽  
J. M. Vandenberg ◽  
L. F. Mattheiss ◽  
F. C. Unterwald ◽  
A. Maury
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
Metallic Behavior ◽  
Distinctive Features ◽  
X Ray ◽  
Total Energies ◽  
Sputter Deposited

ABSTRACTThe formation of TiSi2 thin films on Si has been investigated by in situ x-ray diffraction and by electrical transport. The x-ray results show unequivocally that the staging proceeds through two orthorhombic polytypes of TiSi2 according to the sequence: sputter-deposited metallic Ti films on Si (001) → TiSi2 (C49 structure) → TiSi2 (C54 structure), with no evidence of lower suicides. Electrical transport shows metallic behavior for all phases and distinctive features in the annealing curves which correlate with the structural transformations. Most importantly, the resistivity, characteristically very high for the C49 phase, undergoes a precipitous drop at the C49 → C54 transition. Total energies for both phases are calculated and, consistent with the occurrence of a structural phase transformation, are found not to differ appreciably.

In Situ Monitoring in the Pulsed Laser Deposition of Ferroelectric Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Peter K. Schenck ◽  
Mark D. Vaudin ◽  
Byeong W. Lee ◽  
David W. Bonnell ◽  
John W. Hastie ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Target Surface ◽  
Lattice Parameter ◽  
Ferroelectric Thin Films ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Buffer Gas ◽  
Additional Information

ABSTRACTOptical multichannel emission spectroscopie studies and ICCD (intensified charge coupled device) imaging have been applied to real-time, in situ gas phase species identification and plume structure analysis during the pulsed excimer laser deposition (PLD) of various ferroelectric thin films. Additional information on the non-excited plume species has been obtained using molecular beam-sampling mass spectrometry. The materials studied included targets of PbZr0.53Ti0.47O3 (PZT) and BaTiO3. For the BaTiO3 films, the partial pressure of oxygen in the buffer gas and the atomic oxygen emission within the plume both correlated with the observed lattice parameter, as determined by X-ray analysis. Reduced plume oxygen content resulted in an increased lattice parameter that, in turn, could be related to a reduced oxygen content in the film. ICCD imaging of plumes from PZT targets identified the presence of ejected particulates in the plume after multiple laser shots had worked the target surface. Scanning electron microscopy (SEM) studies of the PZT target surface and film morphology, revealed cone-like formations on the target and éjecta on the films which correlated well with the ICCD observation of plume particulates.

Ex situ and In situ TEM study of the relaxation of thin films by the modified frank-read mechanism

1992 ◽  
Vol 50 (2) ◽  
pp. 1342-1343
Author(s):  
F.K. LeGoues
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
Ex Situ ◽  
In Situ Tem ◽  
Wide Range ◽  
Strong Resemblance ◽  
Image Position

In recent papers, we have described a novel mechanism for strain relaxation of thin films. Because of its strong resemblance to the well known Frank-Read sources of dislocations, it was called the “Modified-Frank-Read” (MFR) mechanism. This process was first observed during the growth of compositionally graded SiGe/Si(001) thin films, where it results in dislocations pile-ups being injected deep into an initially perfect substrate, leaving the topmost part of the film relaxed and nominally defect free. This last observation opens the door to a wide range of electronic applications since it makes it possible to grow electronic grade buffer layers of arbitrary composition and lattice parameter.The exact mechanism of the reproduction of dislocations was identified through tilting experiment and analysis of several compositionally graded SiGe/Si(001) structures. These also provided the important parameters controlling this mode of strain relaxation. We thus demonstrated that the MFR mechanism corresponds to the multiplication of “corner dislocations” (dislocations whose line forms a 90° angle) by simultaneous glide on two (111) planes.

In-situ annealing effect of sputter-deposited Nd1Ba2Cu3O7−δ thin films

1999 ◽  
Vol 354 (1-2) ◽  
pp. 195-200 ◽  
Author(s):  
Z. Mori ◽  
S. Nozoe ◽  
N. Yokoyama ◽  
S. Koba ◽  
T. Doi ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Effect ◽  
Sputter Deposited

scholarly journals Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Diffraction Analysis ◽  
Piezoelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Dielectric And Piezoelectric Properties

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

In-Situ Magnetic Field Induced Structure and Properties of Epitaxial Spinel Ferrite Thin Films Prepared by Pulsed Laser Deposition (PLD) (Dynamic Aurora PLD Method)

2004 ◽  
Vol 853 ◽  
Author(s):  
Naoki Wakiya ◽  
Toyokazu Nagamune ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Pulsed Laser Deposition ◽  
Deposition Rate ◽  
Spinel Ferrite ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Laser Deposition

ABSTRACTThe influence of an in-situ magnetic field on the plume during pulsed laser deposition (PLD) to prepare epitaxial nickel zinc ferrite (NZF) thin films were investigated. An air core coil (solenoid coil) was installed between a target and a substrate, and up to 43 mT of magnetic field was generated by direct current (DC)(Dynamic Aurora PLD method). Application of magnetic field brought about following structural and property changes;(1) deposition rate was almost doubled, (2) the concentration of Ni and Zn in the film was decreased, (3) lattice parameter was unchanged, and (4) magnetization and coercivity was increased. Since deposition rate was increased by application of magnetic field, films with same thickness was also prepared without magnetic field, however, magnetic properties were unchanged. This indicates that application of in-situ magnetic field improved magnetic properties.

Giant Magnetoresistance Phenomenon in Laser Ablated La0.6y0.07ca0.33mnox Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
Dhananjay Kumar ◽  
R. Kalyanaraman ◽  
J. Narayan ◽  
David K. Christen
Keyword(s):  
Thin Films ◽  
Giant Magnetoresistance ◽  
Lattice Parameter ◽  
Insulator Transition ◽  
X Ray Diffraction ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spin Dependent Scattering ◽  
Resistance Peak

ABSTRACTMicrostructural and magnetoresistance properties of La0.6Y0.07Ca0.33MnOx (Y-doped LCMO) thin films grown in-situ by pulsed laser ablation have been studied. Transmission election microscopy and x-ray diffraction measurements have shown that the Y-doped LCMO thin films grow epitaxially on (100) LaAl03 substrates and are cubic with a lattice parameter of 3.849 ?. The as-deposited films exhibited a metal-insulator transition at 130 K and a giant magnetoresistance (GMR) at 125 K with a MR ratio (dR/RH) of 1500% in the presence of a magnetic field of 6 Tesla. Such a colossal value of MR ratio for as-deposited Y-doped LCMO films is quite promising keeping in view the fact that these films were unannealed and not optimized. We ascribe this magnetoresistance to spin-dependent electron scattering coupled with the presence of intervening O2. ions across Mn3+ and Mn4+ with suppressed separation between Mn-O layers caused by smaller sized Y-dopant. The effect of annealing on the positive-shift of metal-insulator transition temperature and the improvement in GMR ratio has also been discussed. We also report a non-ohmic response in the Y-doped LCMO films which is observed only in the region of the resistance peak and lends support to a conduction mechanism in these materials based on spin-dependent scattering of electrons.

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