Low voltage stress-induced leakage current in HfO2 dielectric films

2010 ◽  
Vol 171 (1-3) ◽  
pp. 159-161 ◽  
Author(s):  
Tingting Tan ◽  
Zhengtang Liu ◽  
Hao Tian ◽  
Wenting Liu
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Dielectric Films ◽  
Voltage Stress ◽  
Stress Induced Leakage Current

Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers

2005 ◽  
Vol 20 (8) ◽  
pp. 668-672 ◽  
Author(s):  
Robert O'Connor ◽  
Stephen McDonnell ◽  
Greg Hughes ◽  
Robin Degraeve ◽  
Thomas Kauerauf
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Dielectric Layers ◽  
Voltage Stress ◽  
Stress Induced Leakage Current

Interface defect generation probed by low voltage stress induced leakage current

2006 ◽  
Vol 504 (1-2) ◽  
pp. 307-311
Author(s):  
Y.J. Yu ◽  
Q. Guo ◽  
X. Zeng ◽  
H. Li ◽  
S.H. Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Defect Generation ◽  
Interface Defect ◽  
Voltage Stress ◽  
Stress Induced Leakage Current

Two-trap model for low voltage stress-induced leakage current in ultrathin SiON dielectrics

2008 ◽  
Vol 104 (5) ◽  
pp. 053718 ◽  
Author(s):  
Paul E. Nicollian ◽  
Anand T. Krishnan ◽  
Vijay K. Reddy
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Voltage Stress ◽  
Stress Induced Leakage Current

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

2010 ◽  
Vol 1252 ◽  
Author(s):  
Sahar Sahhaf ◽  
Robin Degraeve ◽  
Mohammed Zahid ◽  
Guido Groeseneken
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Charge Injection ◽  
Constant Voltage ◽  
High K ◽  
Voltage Stress ◽  
Stress Induced Leakage Current ◽  
High K Dielectric

AbstractIn this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

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