Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers
2005 ◽
Vol 20
(8)
◽
pp. 668-672
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Keyword(s):
Keyword(s):
2007 ◽
Vol 47
(2-3)
◽
pp. 401-408
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2010 ◽
Vol 171
(1-3)
◽
pp. 159-161
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2007 ◽
Vol 22
(10)
◽
pp. 1165-1173
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Keyword(s):
2008 ◽
Vol 48
(8-9)
◽
pp. 1171-1177
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2005 ◽
Vol 20
(11)
◽
pp. 1116-1121
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Keyword(s):
Keyword(s):