Solid-state-growth of lead-free piezoelectric (Na1/2Bi1/2)TiO3-CaTiO3 single crystals and their characterization

2017 ◽  
Vol 223 ◽  
pp. 109-119 ◽  
Author(s):  
Hengyang Sun ◽  
John G. Fisher ◽  
Su-Hyun Moon ◽  
Huyen Tran Tran ◽  
Jong-Sook Lee ◽  
...  
Keyword(s):  
Solid State ◽  
Single Crystals ◽  
Lead Free ◽  
State Growth

Seed-Free Solid-State Growth of Large Lead-Free Piezoelectric Single Crystals: (Na1/2K1/2)NbO3

2015 ◽  
Vol 98 (10) ◽  
pp. 2988-2996 ◽  
Author(s):  
Minhong Jiang ◽  
Clive A. Randall ◽  
Hanzheng Guo ◽  
Guanghui Rao ◽  
Rong Tu ◽  
...  
Keyword(s):  
Solid State ◽  
Single Crystals ◽  
Lead Free ◽  
State Growth

Solid-state crystal growth of lead-free ferroelectrics

2020 ◽  
Vol 8 (23) ◽  
pp. 7606-7649 ◽  
Author(s):  
Peter Kabakov ◽  
Christopher Dean ◽  
Valsala Kurusingal ◽  
Zhenxiang Cheng ◽  
Ho-Yong Lee ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Single Crystals ◽  
Review Article ◽  
Lead Free

Review article of the solid-state crystal growth (SSCG) technique and the progress of lead-free ferroelectric single crystals for piezoelectric applications.

scholarly journals Strong and anisotropic magnetoelectricity in composites of magnetostrictive Ni and solid-state grown lead-free piezoelectric BZT–BCT single crystals

2017 ◽  
Vol 5 (1) ◽  
pp. 36-41 ◽  
Author(s):  
Haribabu Palneedi ◽  
Venkateswarlu Annapureddy ◽  
Ho-Yong Lee ◽  
Jong-Jin Choi ◽  
Si-Young Choi ◽  
...  
Keyword(s):  
Solid State ◽  
Single Crystals ◽  
Lead Free

Effects of minor alloying additive on the shear strength of Sn-58Bi solder joint

2013 ◽  
Vol 2013 (1) ◽  
pp. 000100-000103 ◽  
Author(s):  
Omid Mokhtari ◽  
Hiroshi Nishikawa
Keyword(s):  
Solid State ◽  
Solder Joint ◽  
Compound Layer ◽  
Layer Growth ◽  
Lead Free ◽  
Brittle Behavior ◽  
Phase Coarsening ◽  
Before And After ◽  
State Growth ◽  
Lead Free Solders

The use of Pb has been limited in the electronic industry because of the toxicity of lead. As the result, the research and development activities in developing lead-free solders have been accelerated and some lead-free solders were introduced as alternative. Sn-Bi-based alloys are an alternative to replace Pb-based solders in the low temperature ranges. However, Sn-Bi-based solders show brittle behavior in both the bulk and the interface. Generally, the addition of impurity elements to the solders can improve the ductility of the solder joint in both the bulk and the interface by refining the solder microstructure and suppressing the intermetallics at the interface, respectively. In this study, the effect of third elements, i.e., Ni and In (1 and 0.5wt.%) on the microstructure of the Sn-58Bi solder and thickness of the interface between Sn-58Bi solder and Cu substrate were investigated. Solid state IMC compound layer growth was also examined following the thermal aging of the solder joint. Results after aging show that minor added elements were effective in suppressing the intermetallics at the interface during solid state growth. The results also show that the added In was highly effective in limiting the Bi phase coarsening. Mechanical properties of solder joints, before and after heat treatment, were also investigated by shear and micro-vickers tests.

Solid state growth of Na1/2Bi1/2TiO3–BaTiO3 single crystals and their enhanced piezoelectric properties

2011 ◽  
Vol 317 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Kyoung-Seok Moon ◽  
Dibyaranjan Rout ◽  
Ho-Yong Lee ◽  
Suk-Joong L. Kang
Keyword(s):  
Solid State ◽  
Single Crystals ◽  
Piezoelectric Properties ◽  
State Growth

Ultrahigh piezoelectric coefficient of a lead-free K0.5Na0.5NbO3-based single crystal fabricated by a simple seed-free solid-state growth method

2019 ◽  
Vol 7 (47) ◽  
pp. 14845-14854 ◽  
Author(s):  
Minhong Jiang ◽  
Jingwei Zhang ◽  
Guanghui Rao ◽  
Dedong Li ◽  
Clive A. Randall ◽  
...  
Keyword(s):  
Solid State ◽  
Single Crystal ◽  
Piezoelectric Coefficient ◽  
Lead Free ◽  
Growth Method ◽  
State Growth

KNN-based crystals with ultrahigh piezoelectric coefficients (d33 = 1050 pC N−1, and d33* = 2290 pm V−1) were fabricated.

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