Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes

2020 ◽  
Vol 259 ◽  
pp. 114578
Author(s):  
Faisal S. Al mashary ◽  
Jorlandio F. Felix ◽  
Sukarno O. Ferreira ◽  
Daniele de Souza ◽  
Yara G. Gobato ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Index ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Tio2 Thin Films ◽  
Doped Tio2

scholarly journals Structural and photoluminescence properties of CdO doped TiO2 thin films prepared by pulsed laser deposition

2019 ◽  
Vol 13 (28) ◽  
pp. 82-90
Author(s):  
Ghusson H. Mohammed
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tetragonal Structure ◽  
Deposition Technique ◽  
Photoluminescence Properties ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Pl Emission

TiO2 thin films have been deposited at different concentration ofCdO of (x= 0.0, 0.05, 0.1, 0.15 and 0.2) Wt. % onto glass substratesby pulsed laser deposition technique (PLD) using Nd-YAG laserwith λ=1064nm, energy=800mJ and number of shots=500. Thethickness of the film was 200nm. The films were annealed todifferent annealing (423 and 523) k. The effect of annealingtemperatures and concentration of CdO on the structural andphotoluminescence (PL) properties were investigated. X-raydiffraction (XRD) results reveals that the deposited TiO2(1-x)CdOxthin films were polycrystalline with tetragonal structure and manypeaks were appeared at (110), (101), (111) and (211) planes withpreferred orientation along 2Ɵ around 27.30. The results ofphotoluminescence (PL) emission show that there are two peakspositioned are around 320 nm and 400 nm for predominated peakand 620 nm and 680 nm for the small peaks.

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