Electrical properties of ZnO films implanted with rare earth and their relationship with structural and optical parameters

2022 ◽  
Vol 275 ◽  
pp. 115526
Author(s):  
Tomasz A. Krajewski ◽  
Renata Ratajczak ◽  
Serhiy Kobyakov ◽  
Wojciech Wozniak ◽  
Krzysztof Kopalko ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Zno Films ◽  
Optical Parameters

Effect of Rare Earth Oxides on Electrical Properties of Spark Plasma Sintered AlN Ceramics

2015 ◽  
Vol 30 (3) ◽  
pp. 267
Author(s):  
HUANG Lin-Yun ◽  
LI Chen-Hui ◽  
KE Wen-Ming ◽  
SHI Yu-Sheng ◽  
HE Zhi-Yong ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Oxides ◽  
Spark Plasma

The magnetic and electrical properties of some rare earth tetraborides

1979 ◽  
Vol 67 (2) ◽  
pp. 531-539 ◽  
Author(s):  
J Etourneau ◽  
J.P Mercurio ◽  
A Berrada ◽  
P Hagenmuller ◽  
R Georges ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Magnetic And Electrical Properties

Microstructure and Electrical Properties of ZnO-Pr6O11-Dy2O3-Based Varistor Ceramics Doped with La2O3

2007 ◽  
Vol 336-338 ◽  
pp. 680-683
Author(s):  
Jing Nan Cai ◽  
Yuan Hua Lin ◽  
Rong Juan Zhao ◽  
Ce Wen Nan ◽  
Jin Liang He
Keyword(s):  
Rare Earth ◽  
Phase Composition ◽  
Electrical Properties ◽  
Rare Earth Elements ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Intergranular Phase ◽  
Ceramic Method ◽  
Sem Micrographs ◽  
Ceramic Samples

ZnO-Pr6O11-Dy2O3-based varistor ceramics doped with 0~1.5 mol% La2O3 were fabricated by a conventional ceramic method. All the samples were sintered at 1350 oCfor 2 h. The phase composition and microstructure of the ceramic samples have been investigated by XRD, SEM and EDS. The results of SEM micrographs indicated that the La2O3 additives can promote ZnO grain’s growth, and the rare earth elements dispersed mainly in the intergranular phase observed by EDS. The electrical properties of the samples determined by the V-I curves revealed that the breakdown voltage of samples decreases from 508 V/mm to about 100 V/mm with the increase of La2O3, and the nonlinear exponent also decreases from 20.2 to 13.2. The typical leakage current is about 10.2 μA for the sample doped with 0.5 mol% La2O3.

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 250-254 ◽  
Author(s):  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Hidemi Takasu ◽  
Paul Fons ◽  
Kakuya Iwata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films

Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress

2012 ◽  
Vol 8 (4) ◽  
pp. 375-379 ◽  
Author(s):  
Young Soo Lim ◽  
Seul Gi Seo ◽  
Bo Bae Kim ◽  
Hyoung-Seuk Choi ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Films ◽  
Bending Stress ◽  
Doped Zno

Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP

2013 ◽  
Author(s):  
L. Dasaradha Rao ◽  
N. Ramesha Reddy ◽  
A. Ashok Kumar ◽  
V. Rajagopal Reddy
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Metal ◽  
Schottky Contact ◽  
Earth Metal ◽  
Temperature Dependent ◽  
P Type
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