Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

2005 ◽  
Vol 8 (1-3) ◽  
pp. 125-129 ◽  
Author(s):  
Takehisa Kurosawa ◽  
Tomoyuki Komatsu ◽  
Masao Sakuraba ◽  
Junichi Murota
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Pressure Chemical

Low-pressure chemical vapor deposition of GaN epitaxial films

1998 ◽  
Vol 189-190 ◽  
pp. 330-334 ◽  
Author(s):  
M Topf ◽  
G Steude ◽  
S Fischer ◽  
W Kriegseis ◽  
I Dirnstorfer ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Pressure Chemical

Physical and Electrical Properties of Tantalum Oxide Thin Films Deposited by Low Pressure Chemical Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Oxide Thin Films ◽  
Pressure Chemical

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.

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