Electrical Properties of 10-50 nm TEOS (Tetraethoxysilane) LPCVD (Low Pressure Chemical Vapor Deposition) Films.

1984 ◽  
Author(s):  
R. H. Vogel ◽  
S. R. Butler ◽  
F. J. Feigl
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Physical and Electrical Properties of Tantalum Oxide Thin Films Deposited by Low Pressure Chemical Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Oxide Thin Films ◽  
Pressure Chemical

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.

scholarly journals Physical and electrical properties of graphene grown under different hydrogen flow in low pressure chemical vapor deposition

2014 ◽  
Vol 9 (1) ◽  
pp. 546 ◽  
Author(s):  
Sajjad Hussain ◽  
Muhmmad Iqbal ◽  
Jaehyun Park ◽  
Muneer Ahmad ◽  
Jai Singh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Hydrogen Flow ◽  
Pressure Chemical
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