Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

2005 ◽  
Vol 8 (1-3) ◽  
pp. 121-124 ◽  
Author(s):  
Youngcheon Jeong ◽  
Masao Sakuraba ◽  
Junichi Murota
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Pressure Chemical

Low-pressure chemical vapor deposition of GaN epitaxial films

1998 ◽  
Vol 189-190 ◽  
pp. 330-334 ◽  
Author(s):  
M Topf ◽  
G Steude ◽  
S Fischer ◽  
W Kriegseis ◽  
I Dirnstorfer ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Pressure Chemical

A homogeneous atomic layer MoS2(1−x)Se2xalloy prepared by low-pressure chemical vapor deposition, and its properties

Nanoscale ◽  
2017 ◽  
Vol 9 (2) ◽  
pp. 594-603 ◽  
Author(s):  
Sima Umrao ◽  
Jaeho Jeon ◽  
Su Min Jeon ◽  
Young Jin Choi ◽  
Sungjoo Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Pressure ◽  
Pressure Chemical
Sign in / Sign up

Export Citation Format

Share Document