Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

2015 ◽  
Vol 32 ◽  
pp. 62-67 ◽  
Author(s):  
Cheng-He Ruan ◽  
Yow-Jon Lin ◽  
Ya-Hui Chen ◽  
Hsing-Cheng Chang
Keyword(s):  
Electronic Transport ◽  
Silicon Nanowire ◽  
Type Silicon ◽  
Heterojunction Diodes ◽  
P Type

Encoding Highly Nonequilibrium Boron Concentrations and Abrupt Morphology in p-Type/n-Type Silicon Nanowire Superlattices

2017 ◽  
Vol 9 (42) ◽  
pp. 37105-37111 ◽  
Author(s):  
David J. Hill ◽  
Taylor S. Teitsworth ◽  
Seokhyoung Kim ◽  
Joseph D. Christesen ◽  
James F. Cahoon
Keyword(s):  
Silicon Nanowire ◽  
Type Silicon ◽  
P Type

Flicker noise in N-type and P-type silicon nanowire transistors

2008 ◽  
Author(s):  
Seungwon Yang ◽  
Younghwan Son ◽  
Sung Dae Suk ◽  
Dong-Won Kim ◽  
Donggun Park ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Type Silicon ◽  
P Type

Parallel and Complementary Detection of Proteins by p-type and n-type Silicon Nanowire Transistor Arrays

2005 ◽  
Vol 900 ◽  
Author(s):  
Gengfeng Zheng ◽  
Fernando Patolsky ◽  
Charles M. Lieber
Keyword(s):  
Real Time ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Sensor Arrays ◽  
Rapid Screening ◽  
Label Free ◽  
Type Silicon ◽  
Nanowire Sensor ◽  
P Type ◽  
Prostate Specific Antigens

ABSTRACTLabel-free, real-time, parallel and complementary electrical detection of proteins is demonstrated by p-type and n-type silicon nanowire field-effect transistors in the same arrays. Composed of hundreds of individually electrically addressable nanowire devices with highly sensitive and reproducible performances, these nanowire arrays can be controllably modified by monoclonal antibodies, and show discrete conductance changes characteristic of highly selective binding and unbinding of target proteins, such as prostate specific antigens (PSA), thus providing a general and powerful platform for high-throughput real-time parallel detection and rapid screening of libraries of biomolecules. Studies show that the PSA proteins can be routinely detected at femtomolar concentrations with high selectivity, and simultaneously incorporation of both p-type and n-type silicon nanowire devices enable discrimination against false positive/negative signals. The integrated complementary nanowire sensor arrays open up substantial opportunities for diagnosis and treatment of complex diseases such as cancer, detection of biological threats, and fundamental proteomic and biophysical studies.

Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

2013 ◽  
Vol 48 (11) ◽  
pp. 4596-4600 ◽  
Author(s):  
Vinod Kumar ◽  
Neetu Singh ◽  
Avinashi Kapoor ◽  
Odireleng M. Ntwaeaborwa ◽  
Hendrik C. Swart
Keyword(s):  
Type Silicon ◽  
Doped Zno ◽  
Heterojunction Diodes ◽  
Fabrication And Characterization ◽  
P Type ◽  
Co Doped

“Backward Diode” Characteristics of p-Type Diamond/n-Type Silicon Heterojunction Diodes

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4247-4252 ◽  
Author(s):  
Toempong Phetchakul ◽  
Hideki Kimura ◽  
Yukio Akiba ◽  
Tateki Kurosu ◽  
Masamori Iida
Keyword(s):  
Type Silicon ◽  
Heterojunction Diodes ◽  
P Type
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