Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer

2017 ◽  
Vol 71 ◽  
pp. 166-173 ◽  
Author(s):  
Umar Bashir ◽  
Zainuriah Hassan ◽  
Naser M. Ahmed ◽  
Ammar Oglat ◽  
A.S. Yusof
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
High Mobility ◽  
Zno Buffer Layer

Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

2004 ◽  
Vol 262 (1-4) ◽  
pp. 456-460 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Boyang Liu ◽  
HuiChao Zhu ◽  
Tianpeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Zno Thin Films ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer

scholarly journals The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

2017 ◽  
Vol 206 ◽  
pp. 117-120 ◽  
Author(s):  
David Coathup ◽  
Zheng Li ◽  
Xiaojing Zhu ◽  
Haitao Ye
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Buffer Layer

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

2010 ◽  
Vol 256 (22) ◽  
pp. 6834-6837 ◽  
Author(s):  
Te-Wei Chiu ◽  
Kazuhiko Tonooka ◽  
Naoto Kikuchi
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Glass Substrates ◽  
Zno Buffer Layer ◽  
Vo2 Thin Films

scholarly journals Optical properties of PZT thin films deposited on a ZnO buffer layer

2007 ◽  
Vol 29 (12) ◽  
pp. 1871-1877 ◽  
Author(s):  
T. Schneider ◽  
D. Leduc ◽  
J. Cardin ◽  
C. Lupi ◽  
N. Barreau ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Buffer Layer ◽  
Pzt Thin Films ◽  
Zno Buffer Layer

Growth of highly near-c-axis oriented ferroelectric LiNbO3 thin films on Si with a ZnO buffer layer

2013 ◽  
Vol 102 (5) ◽  
pp. 051914 ◽  
Author(s):  
Peng You ◽  
Chaojing Lu ◽  
Wanneng Ye ◽  
Lanzhong Hao ◽  
Jun Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Buffer Layer

Effect of Excimer Laser Annealing on Optical Properties of GaN Films Deposited by R.F. Magnetron Sputtering

2001 ◽  
Vol 693 ◽  
Author(s):  
Man Young Sung ◽  
Woong-Je Sung ◽  
Yong-Il Lee ◽  
Chun-Il Park ◽  
Woo-Boem Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Excimer Laser Annealing ◽  
Zno Buffer Layer

Abstract:GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing(ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy(AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.

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