scholarly journals Optical properties of PZT thin films deposited on a ZnO buffer layer

2007 ◽  
Vol 29 (12) ◽  
pp. 1871-1877 ◽  
Author(s):  
T. Schneider ◽  
D. Leduc ◽  
J. Cardin ◽  
C. Lupi ◽  
N. Barreau ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Buffer Layer ◽  
Pzt Thin Films ◽  
Zno Buffer Layer

Structural, ferroelectric and optical properties of PZT thin films

2005 ◽  
Vol 369 (1-4) ◽  
pp. 135-142 ◽  
Author(s):  
S.K. Pandey ◽  
A.R. James ◽  
R. Raman ◽  
S.N. Chatterjee ◽  
Anshu Goyal ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pzt Thin Films

Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

2004 ◽  
Vol 262 (1-4) ◽  
pp. 456-460 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Boyang Liu ◽  
HuiChao Zhu ◽  
Tianpeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Zno Thin Films ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer

scholarly journals The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

2017 ◽  
Vol 206 ◽  
pp. 117-120 ◽  
Author(s):  
David Coathup ◽  
Zheng Li ◽  
Xiaojing Zhu ◽  
Haitao Ye
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Buffer Layer

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

2010 ◽  
Vol 256 (22) ◽  
pp. 6834-6837 ◽  
Author(s):  
Te-Wei Chiu ◽  
Kazuhiko Tonooka ◽  
Naoto Kikuchi
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Glass Substrates ◽  
Zno Buffer Layer ◽  
Vo2 Thin Films

Microstructure and Electrical Properties of R.F. Magnetron Sputtering Derived PZT Thin Films Deposited on PbO Buffer Layer

2005 ◽  
Vol 486-487 ◽  
pp. 626-629 ◽  
Author(s):  
Chul Ho Park ◽  
Young Gook Son
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Memory Window ◽  
Processing Temperature ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Maximum Value ◽  
Pzt Thin Film ◽  
Mfis Structure

The MFS and MFIS structures were prepared on the Si and PbO/Si substrate by the r.f. magnetron sputtering method. When the PbO buffer layer was inserted between the PZT thin film and Si substrate, the crystallization of the PZT thin films was considerably improved, and the processing temperature was lowered. Compared with the MFS structure, memory window values of the MFIS structure with the buffer layer were considerably improved. In particular, in the MFIS structure, the maximum value of the memory window is 2.0 V under the applied voltage of 9V for Pt/PZT (200 nm, 400ı)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300ı.

Substrate and buffer layer effect on the structural and optical properties of graphene oxide thin films

RSC Advances ◽  
2013 ◽  
Vol 3 (17) ◽  
pp. 5926 ◽  
Author(s):  
J. R. Rani ◽  
Juhwan Lim ◽  
Juyeong Oh ◽  
Dukhan Kim ◽  
Dongil Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Graphene Oxide ◽  
Buffer Layer ◽  
Oxide Thin Films ◽  
Structural And Optical Properties ◽  
Layer Effect
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