Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

2004 ◽  
Vol 262 (1-4) ◽  
pp. 456-460 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Boyang Liu ◽  
HuiChao Zhu ◽  
Tianpeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Zno Thin Films ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

2006 ◽  
Vol 252 (8) ◽  
pp. 2888-2893 ◽  
Author(s):  
Ruijin Hong ◽  
Jianda Shao ◽  
Hongbo He ◽  
Zhengxiu Fan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Zno Thin Films ◽  
Buffer Layer Thickness

Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Ishida ◽  
T. Hashimoto ◽  
T. Takayama ◽  
O. Imafuji ◽  
M. Yuri ◽  
...  
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Buffer Layers ◽  
Nitridation Time ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness

ABSTRACTHigh quality GaN films are grown on sapphire(0001) substrates by low pressure MOCVD using TMG and NH3 as source materials. Effects of surface nitridation and buffer layer thickness on the quality of over-grown GaN films are investigated. It is revealed by atomic force microscope (AFM) observations that surface roughness of the annealed buffer layers strongly depends on the nitridation time. Dislocation density and surface morphology of the high temperature GaN layer depend on the buffer layer thickness. It is found that sufficient surface nitridation of sapphire makes the buffer layer just prior to the high temperature growth very smooth, which is essential to obtain flat thick-GaN on it. It is also found that thickness of the buffer layer largely influences the dislocation density in the over-grown thick GaN. In order to obtain good surface morphology and low dislocation density at the same time, both nitridation time and buffer layer thickness must be optimized.

Effects of buffer layer thickness on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

Vacuum ◽  
2012 ◽  
Vol 86 (9) ◽  
pp. 1373-1379 ◽  
Author(s):  
Min Su Kim ◽  
Do Yeob Kim ◽  
Min Young Cho ◽  
Giwoong Nam ◽  
Soaram Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
Buffer Layer Thickness

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

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