Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films

2021 ◽  
Vol 133 ◽  
pp. 105929
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Pao-Hsun Huang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Annealing Temperature ◽  
Oxide Films ◽  
Atomic Layer ◽  
Oxygen Annealing ◽  
Zinc Oxide Films ◽  
Aluminum Doped Zinc Oxide ◽  
Effect Of Oxygen

The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition

2011 ◽  
Vol 176 (3) ◽  
pp. 237-241 ◽  
Author(s):  
G. Luka ◽  
L. Wachnicki ◽  
B.S. Witkowski ◽  
T.A. Krajewski ◽  
R. Jakiela ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition ◽  
Aluminum Doped Zinc Oxide ◽  
Al Distribution

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition

Properties of Sprayed Aluminum-Doped Zinc Oxide Films—A Review

2014 ◽  
Vol 31 (11) ◽  
pp. 1411-1423 ◽  
Author(s):  
K. Ravichandran ◽  
N. Jabena Begum ◽  
S. Snega ◽  
B. Sakthivel
Keyword(s):  
Zinc Oxide ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Aluminum Doped Zinc Oxide

Effect of RF power of Al2O3 target on the physical properties of aluminum-doped zinc oxide films

2020 ◽  
Vol 126 (11) ◽  
Author(s):  
Mohamed Fathy Hasaneen ◽  
M. M. Abd El-Raheem ◽  
Mahrous R. Ahmed
Keyword(s):  
Zinc Oxide ◽  
Physical Properties ◽  
Oxide Films ◽  
Rf Power ◽  
Zinc Oxide Films ◽  
Aluminum Doped Zinc Oxide
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