Correlating the thermomechanical properties of a novel bio-based epoxy vitrimer with its crosslink density

2021 ◽  
pp. 102814
Author(s):  
Hafeezullah Memon ◽  
Yi Wei ◽  
Chengyan Zhu
2014 ◽  
Vol 2014 ◽  
pp. 1-12 ◽  
Author(s):  
Andrea D. Muschenborn ◽  
Keith Hearon ◽  
Brent L. Volk ◽  
Jordan W. Conway ◽  
Duncan J. Maitland

Purpose. To evaluate the feasibility of utilizing a system of SMP acrylates for a thrombectomy device by determining an optimal crosslink density that provides both adequate recovery stress for blood clot removal and sufficient strain capacity to enable catheter delivery. Methods. Four thermoset acrylic copolymers containing benzyl methacrylate (BzMA) and bisphenol A ethoxylate diacrylate (Mn∼512, BPA) were designed with differing thermomechanical properties. Finite element analysis (FEA) was performed to ensure that the materials were able to undergo the strains imposed by crimping, and fabricated devices were subjected to force-monitored crimping, constrained recovery, and bench-top thrombectomy. Results. Devices with 25 and 35 mole% BPA exhibited the highest recovery stress and the highest brittle response as they broke upon constrained recovery. On the contrary, the 15 mole% BPA devices endured all testing and their recovery stress (5 kPa) enabled successful bench-top thrombectomy in 2/3 times, compared to 0/3 for the devices with the lowest BPA content. Conclusion. While the 15 mole% BPA devices provided the best trade-off between device integrity and performance, other SMP systems that offer recovery stresses above 5 kPa without increasing brittleness to the point of causing device failure would be more suitable for this application.


Polymer ◽  
2011 ◽  
Vol 52 (11) ◽  
pp. 2445-2452 ◽  
Author(s):  
Ananyo Bandyopadhyay ◽  
Pavan K. Valavala ◽  
Thomas C. Clancy ◽  
Kristopher E. Wise ◽  
Gregory M. Odegard

2002 ◽  
Vol 10 (6) ◽  
pp. 467-480
Author(s):  
Zuo-Guang Zhang ◽  
Gang Sui ◽  
Wei-Hong Zhong ◽  
Zhi-Jie Sun

The effects of thermal post-treatment on EB-cured epoxy resins have been studied. Dynamic mechanical analyses were performed on samples which differed in EB radiation dose, initiator dosage, molecular weight and distribution. When the EB-cured epoxy resins were heated, the crosslink density increased. The glass transition temperature (Tg) was shifted to a higher temperature and the storage modulus (E’) remained at a high level in the heat-treated samples with increasing temperature. But when the temperature of heat treatment exceeded the trigger temperature of the initiator, an α'-relaxation peak derived from the local thermal curing network was observed in the tan δ curve. When the crosslink density induced by radiation increased, the effect of heat treatment was weakened and the temperature of the α′-relaxation peak gradually decreased. The initiator dosage and molecular weight played an important role in determining the Tg and E′ of heat-treated samples with approximately the same radiation crosslink density. When the polydispersity increased in the heat-treated samples with the same molecular weight, a higher temperature for the Tg and the α'-relaxation peak were both shown. The crosslink density and E′ at high temperatures were higher in the heat-treated samples with broad molecular weight distribution.


MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.


2020 ◽  
pp. 58-66
Author(s):  
N. T. Kakhramanov ◽  
◽  
I. V. Bayramova ◽  
S. S. Pesetsky ◽  
◽  
...  

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