Temperature dependence of electron-beam induced effects in amorphous apatite

2008 ◽  
Vol 266 (12-13) ◽  
pp. 3037-3042 ◽  
Author(s):  
I.-T. Bae ◽  
Y. Zhang ◽  
W.J. Weber ◽  
M. Ishimaru ◽  
Y. Hirotsu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Temperature Dependence

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Electron Beam Induced Epitaxial Crystallization of Silicon

1990 ◽  
Vol 122 (1) ◽  
pp. K35-K37 ◽  
Author(s):  
D. Hoehl ◽  
V. Heera ◽  
H. Bartsch ◽  
K. Wollschläger ◽  
W. Skorupa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Temperature Dependence ◽  
Epitaxial Crystallization

Transport Measurements of Individual Bi Nanowires

1999 ◽  
Vol 582 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu Ming Lin ◽  
Takaaki Koga ◽  
Jackie Y. Ying ◽  
Mildred S. Dresselhaus
Keyword(s):  
Electron Beam ◽  
Temperature Dependence ◽  
Electron Beam Lithography ◽  
Ohmic Contacts ◽  
Physical Significance ◽  
Alumina Template ◽  
Burn Out ◽  
Bi Nanowire ◽  
Lithography Technique ◽  
Confined System

ABSTRACTTransport properties are reported for Bi nanowires, prepared by the filling of an alumina template with molten Bi. The temperature dependence of the resistance is presented for such arrays of Bi nanowires with diameters in the 40 to 200nm range. The data are understood qualitatively on the basis of a model for a quantum-confined system. Finally, a 4-point measurement is performed on an individual Bi nanowire prepared by using an electron beam lithography technique. Techniques for handling the practical issues of non-ohmic contacts and wire burn-out are given. The physical significance of the final results of the measurements are discussed in light of various scattering mechanisms in the nanowire.

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