Temperature Dependence of Electron Beam Induced Epitaxial Crystallization of Silicon

1990 ◽  
Vol 122 (1) ◽  
pp. K35-K37 ◽  
Author(s):  
D. Hoehl ◽  
V. Heera ◽  
H. Bartsch ◽  
K. Wollschläger ◽  
W. Skorupa ◽  
...  
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.


Author(s):  
I.-T. Bae ◽  
Y. Zhang ◽  
W.J. Weber ◽  
M. Ishimaru ◽  
Y. Hirotsu ◽  
...  

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