Conducting ion tracks generated by charge-selected swift heavy ions

Author(s):  
Srashti Gupta ◽  
H.G. Gehrke ◽  
J. Krauser ◽  
C. Trautmann ◽  
D. Severin ◽  
...  
2009 ◽  
Vol 79 (22) ◽  
Author(s):  
Maik Lang ◽  
Jie Lian ◽  
Jiaming Zhang ◽  
Fuxiang Zhang ◽  
William J. Weber ◽  
...  

2020 ◽  
Vol 127 (5) ◽  
pp. 055902 ◽  
Author(s):  
N. Ishikawa ◽  
T. Taguchi ◽  
A. Kitamura ◽  
G. Szenes ◽  
M. E. Toimil-Molares ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
H. Amekura ◽  
K. Narumi ◽  
A. Chiba ◽  
Y. Hirano ◽  
K. Yamada ◽  
...  

Abstract This study reports that high fluence fullerene ion (C60+) irradiation of 1–6 MeV, which was made possible by a new-type of high-flux ion source, elongates metal nanoparticles (NPs) in amorphous SiO2 as efficiently as swift heavy ions (SHIs) of 200 MeV Xe14+, i.e., two orders of the magnitude higher energy ions. Comparing the irradiation effects induced by both the beams, the stopping processes of C60 ions in SiO2 are discussed in this paper. Despite of having almost the same elongation efficiency, the C60+ irradiation induced ~10 times more efficient sputtering due to the clustering enhancement and/or the synergy effect. Ion tracks of ~10.4 nm in diameter and 60–80 nm in length were observed in crystalline SiO2 under 4 MeV C60 irradiation. While the track diameter was comparable to those by SHIs of the same electronic stopping, much shorter track lengths than those predicted by a rigid C60 molecule model indicates that the fragmentation occurred due to nuclear collisions. The elongation of the metal NPs was induced only down to the depth where the tracks were observed but not beyond.


2020 ◽  
Vol 4 (4) ◽  
pp. 43
Author(s):  
Norito Ishikawa ◽  
Tomitsugu Taguchi ◽  
Hiroaki Ogawa

Amorphizable ceramics (LiNbO3, ZrSiO4, and Gd3Ga5O12) were irradiated with 200 MeV Au ions at an oblique incidence angle, and the as-irradiated samples were observed by transmission electron microscopy (TEM). Ion tracks in amorphizable ceramics are confirmed to be homogenous along the ion paths. Magnified TEM images show the formation of bell-shaped hillocks. The ion track diameter and hillock diameter are similar for all the amorphizable ceramics, while there is a tendency for the hillocks to be slightly bigger than the ion tracks. For SrTiO3 (STO) and 0.5 wt% niobium-doped STO (Nb-STO), whose hillock formation has not been fully explored, 200 MeV Au ion irradiation and TEM observation were also performed. The ion track diameters in these materials are found to be markedly smaller than the hillock diameters. The ion tracks in these materials exhibit inhomogeneity, which is similar to that reported for non-amorphizable ceramics. On the other hand, the hillocks appear to be amorphous, and the amorphous feature is in contrast to the crystalline feature of hillocks observed in non-amorphizable ceramics. No marked difference is recognized between the nanostructures in STO and those in Nb-STO. The material dependence of the nanostructure formation is explained in terms of the intricate recrystallization process.


2013 ◽  
Vol 61 (20) ◽  
pp. 7904-7916 ◽  
Author(s):  
W. Jiang ◽  
R. Devanathan ◽  
C.J. Sundgren ◽  
M. Ishimaru ◽  
K. Sato ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.


Sign in / Sign up

Export Citation Format

Share Document